Methods of low temperature oxidation

Abstract

An apparatus for forming a dielectric layer includes a process chamber configured for disposing a substrate therein, a gas inlet for delivering a mixture gas to the process chamber, and an RF generator for producing a plasma from the mixture gas. The plasma includes an oxygen-containing element and a fluorocarbon-containing element. The apparatus also has a heating element configured for maintaining the chamber temperature at a desired process temperature, for example, at 800° C. or lower, and a connector to a vacuum pump for maintaining a process pressure. The apparatus is configured for using the plasma to convert a surface portion of the substrate into an oxidized dielectric material.

1 . An apparatus for forming a dielectric layer, the apparatus comprising:
 a process chamber configured for disposing a substrate therein;   a gas inlet for delivering a mixture gas to the process chamber;   an RF generator for producing a plasma from the mixture gas, said plasma comprising an oxygen-containing element and a fluorocarbon-containing element;   a heating element configured for maintaining the chamber temperature at 800° C. or lower; and   a connector to a vacuum pump for maintaining a process pressure,   wherein the apparatus is configured to convert a surface portion of the substrate into an oxidized dielectric material.   
   
   
       2 . The apparatus of  claim 1  wherein the plasma further comprises an element ionized from N 2 H 2 . 
   
   
       3 . The apparatus of  claim 1  wherein the plasma further comprises a hydrogen and nitrogen mixture with 2-6% hydrogen. 
   
   
       4 . The apparatus of  claim 1  further configured for maintaining the chamber temperature in a range between 150-550° C. 
   
   
       5 . The apparatus of  claim 1  further configured for maintaining the chamber temperature at about 250° C. 
   
   
       6 . The apparatus of  claim 1  further configured for maintaining the chamber temperature below 250° C. 
   
   
       7 . The apparatus of  claim 1  wherein the substrate comprises a material selected from the group consisting of single crystalline silicon, polycrystalline silicon, amorphous silicon, silicon nitride (SiN), silicon germanium, and silicon oxynitride (SiON). 
   
   
       8 . The apparatus of  claim 1  wherein the oxygen-containing element is generated from a gas selected from the group consisting of O 2 , O 3 , NO, H 2 O, and NO 2 . 
   
   
       9 . The apparatus of  claim 1  wherein the fluorocarbon-containing element is generated from a gas selected from the group consisting of CF 4 , CHF 3 , CH 2 F 2 , and CH 3 F. 
   
   
       10 . The apparatus of  claim 1  further configured for selecting a CF 4  flow rate for adjusting a thickness associated with the oxidized dielectric material. 
   
   
       11 . The apparatus of  claim 1  further configured to provide a process condition comprising a process pressure in the range of about 100˜10,000 mTorr, an R.F. power in the range of about 500˜5,000 W, oxygen gas at a flow rate in the range of about 300˜20,000 sccm, a forming gas at a flow rate of about 30˜3,000 sccm, and a carbon and fluorine-containing gas at a flow of about 2 to 100 sccm. 
   
   
       12 . The apparatus of  claim 1  further configured to provide a process condition comprising a process pressure of about 1,500 mTorr, an R. F. power of about 2,500 W, an oxygen gas at a flow rate of about 3,000 sccm, a forming gas at a flow rate of about 300 sccm, and a carbon and fluorine-containing gas at a flow rate of about 25 sccm. 
   
   
       13 . An apparatus for forming a dielectric layer, the apparatus comprising:
 a process chamber configured for disposing a substrate therein;   a gas inlet for delivering a mixture gas to the process chamber;   an RF generator for producing a plasma from the mixture gas, said plasma comprising an oxygen-containing element and a fluorocarbon-containing element;   a heating element configured for maintaining a process temperature; and   a connector to a vacuum pump for maintaining a process pressure,   wherein the apparatus is configured for oxidizing a surface portion of a silicon-containing material by using the plasma to convert the surface portion into an oxidized dielectric material,   wherein the plasma oxidation process being free from a silicon-containing plasma source gas.   
   
   
       14 . The apparatus of  claim 13  wherein the plasma further comprises an element ionized from N 2 H 2 . 
   
   
       15 . The apparatus of  claim 13  wherein the plasma further comprises a hydrogen and nitrogen mixture with 2-6% hydrogen. 
   
   
       16 . The apparatus of  claim 13  further configured for maintaining the chamber temperature in a range between 150-550° C. 
   
   
       17 . The apparatus of  claim 13  wherein the substrate comprises a material selected from the group consisting of single crystalline silicon, polycrystalline silicon, amorphous silicon, silicon nitride (SiN), silicon germanium, and silicon oxynitride (SiON). 
   
   
       18 . The m apparatus of  claim 13  wherein in the oxygen-containing element is generated from a gas elected from the group consisting of O 2 , O 3 , NO, H 2 O, and NO 2 . 
   
   
       19 . The apparatus of  claim 13  wherein the fluorocarbon-containing element is generated from a gas selected from the group consisting of CF 4 , CHF 3 , CH 2 F 2 , and CH 3 F. 
   
   
       20 . The apparatus of  claim 13  further configured for selecting a CF 4  flow rate for adjusting a thickness associated with the oxidized dielectric material.