Semiconductor manufacturing apparatus

Abstract

A semiconductor manufacturing apparatus comprising a platen holding a polishing pad; a polishing head including a pressurizing mechanism which presses a surface of a processing target substrate onto the polishing pad; and a plurality of temperature adjusters being provided in the platen in a radial direction of the platen and being capable of adjusting temperatures thereof independently from one another, wherein, when the surface of the processing target substrate is polished by rotating the platen and the polishing head, the temperatures of the temperature adjusters are changed, so that temperature adjustment can be performed selectively on a region ranging on the surface of the processing target substrate in a radial direction thereof.

1 . A semiconductor manufacturing apparatus comprising:
 a platen and a polishing pad on the platen;   a polishing head comprising a presser configured to press a surface of a processing target substrate onto the polishing pad; and   a plurality of temperature adjusters in the platen in a radial direction of the platen configured to adjust temperatures of the platen independently from one another,   wherein the temperatures of the temperature adjusters are adjusted while the surface of the processing target substrate is being polished by rotating the platen and the polishing head, in such a manner that the temperature adjusters are configured to selectively control a temperature of a region on the surface of the processing target substrate in a radial direction.   
   
   
       2 . The semiconductor manufacturing apparatus of  claim 1 , wherein the temperature adjusters are Peltier devices. 
   
   
       3 . The semiconductor manufacturing apparatus of  claim 1 , wherein the platen further comprises a thermometer configured to measure a temperature of the surface of the processing target substrate, and the temperatures of the temperature thermometer. 
   
   
       4 . The semiconductor manufacturing apparatus of  claim 3 , wherein the thermometer is substantially at a center of the platen and substantially the same distance from temperature adjusters. 
   
   
       5 . The semiconductor manufacturing apparatus of  claim 3 , further comprising a temperature controller determining the temperatures of the plurality of temperature adjusters on the basis of the information measured by the plurality of thermometers in order to keep the temperature of the surface of the processing target substrate substantially constant. 
   
   
       6 . The semiconductor manufacturing apparatus of  claim 4 , further comprising a temperature controller determining the temperatures of the plurality of temperature adjusters on the basis of the information from the plurality of thermometers in order to keep the temperature of the surface of the processing target substrate substantially constant. 
   
   
       7 . The semiconductor manufacturing apparatus of  claim 1 , further comprising a pressure adjuster configured to selectively adjust pressure to be applied from the presser onto the region. 
   
   
       8 . The semiconductor manufacturing apparatus of  claim 7 , wherein the presser comprises an airbag. 
   
   
       9 . The semiconductor manufacturing apparatus of  claim 3 , wherein the thermometer is an infrared thermometer. 
   
   
       10 . The semiconductor manufacturing apparatus of  claim 1 , wherein the temperature of the temperature adjusters near the center of the processing target substrate is lower than the temperature of the temperature adjusters near circumferential regions on the surface of the processing target substrate. 
   
   
       11 . The semiconductor manufacturing apparatus of  claim 5 , wherein the thermometer is configured to automatically measure the temperature of the surface of the processing target substrate and to transmit measurement data to the temperature controller. 
   
   
       12 . The semiconductor manufacturing apparatus of  claim 11 , further comprising a memory configured to temporarily store the measurement data measured by the thermometer, a controller configured to determine the intensities of signals to the temperature adjusters on the basis of the measurement data, and a voltage converter configured to adjust supply voltages to the temperature adjusters on the basis of the signal intensities from the controller. 
   
   
       13 . The semiconductor manufacturing apparatus of  claim 1 , wherein the temperature adjusters is configured to control the temperature of the surface of the processing target substrate in a range from 35° C. to 50° C.