Method of forming resist pattern and method of manufacturing semiconductor device

Abstract

The present invention improves the OPE characteristic generated by the difference between sparse and dense mask patterns and promotes fidelity in the design of the pattern. Because of this, the present invention includes a step of forming a resist having an acid dissociative dissolution suppression group on a substrate, a step of coating the resist with an acid polymer dissolved in an alcohol based solvent and forming an upper layer film, a step of exposing through a mask, a step of performing a baking process, and a step of processing with an alkali developer, and wherein in the step of performing a baking process, a mixing layer is formed on the resist by the upper layer film and in which a thicker mixing layer is formed in an unexposed part of a region where the pattern density of the mask pattern is high compared to a region where the pattern density is low.

1 - 8 . (canceled) 
     
     
         9 . A method of manufacturing a semiconductor device having a pattern comprising the steps of:
 forming a resist having an acid dissociative dissolution suppression group over a semiconductor substrate or an underlying film formed on said semiconductor substrate;   forming an upper layer film by coating said resist with an acid polymer dissolved in an alcohol based solvent;   exposing through a mask having a dense region and a sparse region of said pattern;   performing a baking process; and   processing with an alkali developer to form a resist pattern patterning said semiconductor substrate or said underlying film using said resist pattern as a mask to form said pattern   
     
     
         10 . The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein said acid polymer has a refractive index n d  of 1.40 to 1.80.   
     
     
         11 . The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein a dissolution speed of said acid polymer to said alkali developer is 2500 nm/s or less.   
     
     
         12 . The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein said acid polymer includes at least one selected from the group consisting of an acid generator and acid compound, and wherein the acid compound is at least one selected from the group consisting of carboxylic acid having at least a fluorinated hydrocarbon group, sulfonic acid having at least a fluorinated hydrocarbon group, and sulfonyl compounds having at least a fluorinated hydrocarbon group.   
     
     
         13 . The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein said acid polymer includes a nitrogen compound, and wherein said nitrogen compound is at least one selected from the group consisting of quaternary ammonium hydroxide, alkanolamine compounds, and amino derivatives.   
     
     
         14 . The method of manufacturing a semiconductor device according to  claim 9 , wherein the acid dissociative dissolution suppression group includes an aliphatic polycyclic group. 
     
     
         15 . The method of manufacturing a semiconductor device according to  claim 14 ,
 wherein the polycyclic group is selected from the group consisting of a group in which one hydrogen atom is removed from bicycloalkane which is substituted with a fluorine atom, a group in which one hydrogen atom is removed from bicycloalkane which is substituted with a fluorinated alkyl group, a group in which one hydrogen is removed from bicycloalkane which is unsubstituted, a group in which one hydrogen atom is removed from tricycloalkane which is substituted with a fluorine atom, a group in which one hydrogen atom is removed from tricycloalkane which is substituted with a fluorinated alkyl group, a group in which one hydrogen atom is removed from tricycloalkane which is unsubstituted, a group in which one hydrogen atom is removed from tetracycloalkane which is substituted with a fluorine atom, a group in which one hydrogen atom is removed from tetracycloalkane which is substituted with a fluorinated alkyl group, and a group in which one hydrogen atom is removed from tetracycloalkane which is unsubstituted.   
     
     
         16 . The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein said dense region is a memory cell region and   said sparse region is a logic region.   
     
     
         17 . The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein a dissolution speeds in said dense region and in said sparse region is substantially same.   
     
     
         18 . The method of manufacturing a semiconductor device according to  claim 9 ,
 wherein in said step of performing a baking process, a mixing layer is formed between the resist and said upper layer film and in which a thicker mixing layer is formed in an unexposed part of a region where a pattern density of the mask pattern is higher than in an unexposed part of a region where said pattern density is lower.