US2010201403A1PendingUtilityA1
Multi-level power supply system for a complementary metal oxide semiconductor
Est. expiryJun 14, 2024(expired)· nominal 20-yr term from priority
G06F 1/26G11C 5/14G11C 11/4074
49
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Claims
Abstract
There is provided a method that includes comparing a voltage level (Vs 1 ) of a lower voltage supply bus to a voltage level (Vs 2 ) of a higher voltage supply bus, and routing current from the lower voltage supply bus to the higher voltage supply bus if Vs 2 <Vs 1 . The lower and higher voltage supply busses provide power to a complementary metal oxide semiconductor (CMOS) circuit. There is also provided a circuit that employs the method.
Claims
exact text as granted — not AI-modified1 . A method, comprising:
comparing a voltage level (Vs 1 ) of a lower voltage supply bus to a voltage level (Vs 2 ) of a higher voltage supply bus; and routing current from said lower voltage supply bus to said higher voltage supply bus if Vs 2 <Vs 1 , wherein said lower and higher voltage supply busses provide power to a complementary metal oxide semiconductor (CMOS) circuit.
2 . The method of claim 1 , wherein said comparing is performed by a device that is powered by said lower voltage supply bus.
3 . The method of claim 1 , wherein said routing of said current continues until Vs 2 ≧Vs 1 .
4 . The method of claim 1 ,
wherein said lower voltage supply bus is a first voltage supply bus, wherein said higher voltage supply bus is a second voltage supply bus, and wherein said method further comprises:
comparing Vs 2 to a voltage level (Vs 3 ) of a third voltage supply bus; and
routing current from said second voltage supply bus to said third voltage supply bus if Vs 3 <Vs 2 .
5 . The method of claim 4 ,
wherein said third voltage supply bus also provides power to said (CMOS) circuit, and wherein said CMOS circuit operates with Vs 3 >Vs 2 >Vs 1 .
6 . The method of claim 1 , wherein said CMOS circuit includes a plurality of p-type metal oxide semiconductor devices in a common well.
7 . The method of claim 6 , wherein said common well is electrically connected to said higher voltage supply bus.
8 . The method of claim 1 , wherein said comparing is performed by a device having inputs for sensing Vs 1 and Vs 2 , and that employs hysteresis to said inputs.
9 . A circuit, comprising:
a comparator that compares a voltage level (Vs 1 ) of a lower voltage supply bus to a voltage level (Vs 2 ) of a higher voltage supply bus; and a switch that routes current from said lower voltage supply bus to said higher voltage supply bus if Vs 2 <Vs 1 , wherein said lower and higher voltage supply busses provide power to a complementary metal oxide semiconductor (CMOS) circuit.
10 . The circuit of claim 9 , wherein said comparator is powered by said lower voltage supply bus.
11 . The circuit of claim 9 , wherein said switch continues to route said current until Vs 2 ≧Vs 1 .
12 . The circuit of claim 9 ,
wherein said comparator is a first comparator, wherein said switch is a first switch, wherein said lower voltage supply bus is a first voltage supply bus, wherein said higher voltage supply bus is a second voltage supply bus, and wherein said circuit further comprises:
a second comparator that compares Vs 2 to a voltage level (Vs 3 ) of a third voltage supply bus; and
a second switch that routes current from said second voltage supply bus to said third voltage supply bus if Vs 3 <Vs 2 .
13 . The circuit of claim 12 ,
wherein said third voltage supply bus also provides power to said (CMOS) circuit, and wherein said CMOS circuit operates with Vs 3 >Vs 2 >Vs 1 .
14 . The circuit of claim 9 , wherein said CMOS circuit includes a plurality of p-type metal oxide semiconductor devices in a common well.
15 . The circuit of claim 14 , wherein said common well is electrically connected to said higher voltage supply bus.
16 . The circuit of claim 9 , wherein said comparator includes inputs for sensing Vs 1 and Vs 2 , and employs hysteresis to said inputs.Join the waitlist — get patent alerts
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