Semiconductor device and method of fabricating same

Abstract

A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.

1 . A method of fabricating a semiconductor device comprising:
 forming a first dielectric film containing silicon over a semiconductor layer;   forming a first contact hole in the first dielectric film;   forming a wiring over the first dielectric film;   forming a second dielectric film from a resinous material over the first dielectric film and the wiring;   forming a second contact hole in the first dielectric film and the second dielectric film;   widening an opening of the second contact hole in the second dielectric film by an isotropic etching; and   forming an electrode over the second dielectric film,   wherein the wiring is connected to the semiconductor layer through the first contact hole, and   wherein the electrode is connected to the semiconductor layer through the second contact hole.   
   
   
       2 . The method according to  claim 1 , wherein the wiring is a source wiring. 
   
   
       3 . The method according to  claim 1 , wherein the electrode is a pixel electrode. 
   
   
       4 . The method according to  claim 1 , wherein the first dielectric film is formed of silicon oxide, silicon nitride or silicon oxynitride. 
   
   
       5 . The method according to  claim 1 , wherein the resinous material is polyimide. 
   
   
       6 . A method of fabricating a semiconductor device comprising:
 forming a first dielectric film containing silicon over a semiconductor layer;   forming a first contact hole in the first dielectric film;   forming a wiring over the first dielectric film;   forming a second dielectric film from a resinous material over the first dielectric film and the wiring;   forming a second contact hole in the first dielectric film and the second dielectric film;   widening an opening of the second contact hole in the second dielectric film by an isotropic etching; and   forming an electrode over the second dielectric film,   wherein the wiring is connected to the semiconductor layer through the first contact hole,   wherein at least a part of the second dielectric film has an inclined or curved surface at the opening, and   wherein the electrode is connected to the semiconductor layer through the second contact hole.   
   
   
       7 . The method according to  claim 6 , wherein the wiring is a source wiring. 
   
   
       8 . The method according to  claim 6 , wherein the electrode is a pixel electrode. 
   
   
       9 . The method according to  claim 6 , wherein the first dielectric film is formed of silicon oxide, silicon nitride or silicon oxynitride. 
   
   
       10 . The method according to  claim 6 , wherein the resinous material is polyimide. 
   
   
       11 . A semiconductor device comprising:
 a semiconductor layer;   a first dielectric film containing silicon over the semiconductor layer, wherein the first dielectric film has a first opening and a second opening;   a wiring over the first dielectric film to contact the semiconductor layer through the first opening;   a second dielectric film containing a resinous material over the first dielectric film and the wiring, wherein the second dielectric film has a third opening; and   an electrode over the second dielectric film to contact the semiconductor layer through the second opening and the third opening,   wherein the second opening is concentric with the third opening, and   wherein the third opening is wider than the second opening.   
   
   
       12 . The semiconductor device according to  claim 11 , wherein the wiring is a source wiring. 
   
   
       13 . The semiconductor device according to  claim 11 , wherein the electrode is a pixel electrode. 
   
   
       14 . The semiconductor device according to  claim 11 , wherein the first dielectric film is formed of silicon oxide, silicon nitride or silicon oxynitride. 
   
   
       15 . The semiconductor device according to  claim 11 , wherein the resinous material is polyimide. 
   
   
       16 . A semiconductor device comprising:
 a semiconductor layer;   a first dielectric film containing silicon over the semiconductor layer, wherein the first dielectric film has a first opening and a second opening;   a wiring over the first dielectric film to contact the semiconductor layer through the first opening;   a second dielectric film containing a resinous material over the first dielectric film and the wiring, wherein the second dielectric film has a third opening; and   an electrode over the second dielectric film to contact the semiconductor layer through the second opening and the third opening,   wherein the second opening is concentric with the third opening,   wherein the third opening is wider than the second opening, and   wherein at least a part of the second dielectric film has an inclined or curved surface at the third opening.   
   
   
       17 . The semiconductor device according to  claim 16 , wherein the wiring is a source wiring. 
   
   
       18 . The semiconductor device according to  claim 16 , wherein the electrode is a pixel electrode. 
   
   
       19 . The semiconductor device according to  claim 16 , wherein the first dielectric film is formed of silicon oxide, silicon nitride or silicon oxynitride. 
   
   
       20 . The semiconductor device according to  claim 16 , wherein the resinous material is polyimide.