Production process of structure

Abstract

A process for producing a structure containing silicon oxide includes a step of forming a first layer of organic spin-on glass on a substrate and a step of forming a second layer of inorganic spin-on glass on the first layer. Thereafter, the first layer is etched by using a pattern formed on the second layer as a mask and then the first layer and the second layer are calcined to prepare the structure containing silicon oxide.

1 - 5 . (canceled) 
     
     
         6 . A production process of a structure containing silicon oxide, comprising:
 a step of preparing a substrate;   a step of forming a first layer comprising a carbon containing silicon oxide compound having a first carbon content on the substrate;   a step of forming, on the first layer, a second layer comprising a carbon containing silicon oxide compound having a second carbon content smaller than the first carbon content;   a step of forming a pattern on the second layer;   a step of etching the first layer by using the pattern formed on the second layer as a mask; and   a step of calcining the first layer and the second layer.   
     
     
         7 . A process according to  claim 6 , wherein a difference between the first carbon content and a second carbon content is 10 wt. % or more. 
     
     
         8 . A process according to  claim 6 , wherein in the step of etching the first layer, an etching gas is selected from the group consisting of H 2 , a mixed gas of N 2  and H 2 , and a mixed gas of N 2  and NH 3 . 
     
     
         9 . A process according to  claim 6 , wherein the substrate comprises silicon oxide. 
     
     
         10 . A process according to  claim 6 , wherein in the step of etching the first layer, the etching is stopped by a surface of the substrate or an etching stop layer provided on the substrate. 
     
     
         11 . A process according to  claim 6 , wherein the structure containing silicon oxide is a structure containing silicon dioxide.