Semiconductor device and method of manufacturing the same

Abstract

Provided is a semiconductor device including a semiconductor substrate having transistors formed thereon, a first interlayer insulating film formed above the semiconductor substrate and the transistors, a ferroelectric capacitor formed above the first interlayer insulating film, a second interlayer insulating film formed above the first interlayer insulating film and the ferroelectric capacitor, a first metal wiring formed on the second interlayer insulating film, and a protection film formed on an upper surface of the wiring but not on a side surface of the wiring.

1 . A semiconductor device comprising:
 a semiconductor substrate including a transistor;   a first interlayer insulating film formed over the semiconductor substrate and the transistor;   a ferroelectric capacitor formed over the first interlayer insulating film;   a second interlayer insulating film formed over the first interlayer insulating film and the ferroelectric capacitor;   a wiring formed over the second interlayer insulating film; and   a protection film formed over an upper surface of the wiring but not on a side surface of the wiring.   
     
     
         2 . The semiconductor device according to  claim 1 , further comprising:
 a third interlayer insulating film formed on the second interlayer insulating film and the protection film, the third interlayer insulating film being formed by a deposition method using plasma.   
     
     
         3 . The semiconductor device according to  claim 2 , wherein the protection film is a plasma protection film for protecting the wiring from damage caused by plasma used for forming the third interlayer insulating film. 
     
     
         4 . The semiconductor device according to  claim 3 , wherein
 the second interlayer insulating film includes a hole formed at a portion over any one of a lower electrode and an upper electrode constituting the capacitor, and   the wiring is electrically connected to the any one of the lower electrode and the upper electrode through the hole.   
     
     
         5 . The semiconductor device according to  claim 3 , wherein the protection film is an insulating film. 
     
     
         6 . The semiconductor device according to  claim 5 , wherein the insulating film is either any one of a silicon oxide film and a ferroelectric oxide film formed by a sputtering method, or any one of a coat-type insulating film and a resin film. 
     
     
         7 . The semiconductor device according to  claim 2 , wherein the deposition method using plasma is a plasma CVD method. 
     
     
         8 . The semiconductor device according to  claim 1 , wherein an insulating hydrogen barrier film is formed over the protection film, the second interlayer insulating film, and on the side surface of the wiring. 
     
     
         9 . The semiconductor device according to  claim 8 , wherein the insulating hydrogen barrier film is formed of any one of an insulating metal oxide film and a silicon-containing insulating film containing nitrogen. 
     
     
         10 . A method of manufacturing a semiconductor device, comprising:
 forming a transistor on a semiconductor substrate;   forming a first interlayer insulating film over the semiconductor substrate and the transistor;   forming a ferroelectric capacitor over the first interlayer insulating film;   forming a second interlayer insulating film over the first interlayer insulating film and the ferroelectric capacitor;   forming a wiring over the second interlayer insulating film; and   forming a protection film over an upper surface of the wiring but not on a side surface of the wiring.   
     
     
         11 . The method of manufacturing a semiconductor device according to  claim 10 , wherein the formation of the wiring includes:
 forming a conductive film over the second interlayer insulating film;   forming the protection film over the conductive film;   forming a resist pattern over the protection film;   etching the conductive film and the protection film by using the resist pattern as a mask, to thereby make the conductive film into the wiring and leave the protection film only over the upper surface of the wiring; and   removing the resist pattern.   
     
     
         12 . The method of manufacturing a semiconductor device according to  claim 11 ,
 wherein no annealing is performed on the wiring after forming the resist pattern and before forming a next film over the second interlayer insulating film.   
     
     
         13 . The method of manufacturing a semiconductor device according to  claim 10 , wherein the protection film is formed by any one of a sputtering method and a deposition method not using plasma. 
     
     
         14 . The method of manufacturing a semiconductor device according to  claim 10 , further comprising:
 forming a third interlayer insulating film over the second interlayer insulating film, the wiring and the protection film by a deposition method using plasma.   
     
     
         15 . The method of manufacturing a semiconductor device according to  claim 14 ,
 wherein a plasma protection film for protecting the wiring from damage caused by plasma used in depositing the third interlayer insulating film is formed as the protection film.   
     
     
         16 . The method of manufacturing a semiconductor device according to  claim 15 , wherein an insulating film is formed as the protection film. 
     
     
         17 . The method of manufacturing a semiconductor device according to  claim 16 , wherein either any one of a silicon oxide film and a ferroelectric oxide film is formed by a sputtering method as the insulating film, or any one of a coat-type insulating film and a resin film is formed as the insulating film. 
     
     
         18 . The method of manufacturing a semiconductor device according to  claim 15 , further comprising:
 forming a hole in the second interlayer insulating film at a portion over any one of a lower electrode and an upper electrode constituting the capacitor,   wherein the wiring is electrically connected to the any one of the lower electrode and the upper electrode through the hole.   
     
     
         19 . The method of manufacturing a semiconductor device according to  claim 10 , further comprising:
 forming an insulating hydrogen barrier film over the protection film, the second interlayer insulating film, and on the side surface of the wiring.   
     
     
         20 . The method of manufacturing a semiconductor device according to  claim 19 , wherein any one of an insulating metal oxide film and a silicon-containing insulating film containing nitrogen is formed as the insulating hydrogen barrier film.