US2010187651A1PendingUtilityA1

Integrated circuit package and method of forming the same

Assignee: ST MICROELECTRONICS ASIAPriority: Jan 26, 2009Filed: Oct 13, 2009Published: Jul 29, 2010
Est. expiryJan 26, 2029(~2.5 yrs left)· nominal 20-yr term from priority
H10W 74/00H10W 72/9413H10W 72/0198H10W 70/093H10W 70/09H10W 70/60H10W 72/241H10P 72/7438H10P 72/7436H10P 72/7424H10P 72/744H10P 72/743H10P 72/74H10P 50/28H10W 74/019H10W 72/07337H10W 74/01H10W 72/012H10W 70/635H10W 70/614H10W 70/095H10W 70/69H10W 70/04H10W 20/01H10W 90/701
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Claims

Abstract

Aspects of the invention are directed towards an integrated circuit package and method of forming the same, and more particularly to a redistributed chip packaging for an integrated circuit. The integrated circuit package includes an integrated circuit having a protective material on at least a portion of the integrated circuit. A lead frame is coupled to the integrated circuit and a conductive layer is also coupled to the interconnect. A solder ball is coupled to the conductive layer and a passivation layer is on the conductive layer. Active and passive components are electrically coupled to the integrated circuit.

Claims

exact text as granted — not AI-modified
1 . An integrated circuit package, comprising:
 an integrated circuit;   a protective material on at least a portion of the integrated circuit;   a lead frame coupled to the integrated circuit;   a conductive layer coupled to the interconnect;   a solder ball coupled the conductive layer; and   a passivation layer on the conductive layer.   
     
     
         2 . The integrated circuit package of  claim 1 , wherein the protective material comprises a compressive molding compound. 
     
     
         3 . The integrated circuit package of  claim 2 , wherein the compressive molding compound comprises epoxy. 
     
     
         4 . The integrated circuit package of  claim 1 , wherein the lead frame comprises a material selected from the group consisting of Al, Au, Cu, and combinations thereof. 
     
     
         5 . The integrated circuit package of  claim 1 , wherein the passivation layer comprises an insulating polymer selected from the group consisting of parylene, polyimide, benzocyclobutene (BCB), and polybenzoxazole (PBO). 
     
     
         6 . The integrated circuit package of  claim 1 , wherein the lead frame comprises a conductive material selected from the group consisting of Au, Al, Cu, Ti, and alloys of the same. 
     
     
         7 . The integrated circuit package of  claim 1 , further comprising at least one of active and passive components electrically coupled to the integrated circuit. 
     
     
         8 . A method of forming an integrated circuit package, comprising the steps of:
 forming a lead frame comprising a first portion and a second portion, wherein the first portion and the second portion intersect at an angle ranging from about 45 degrees to about 135 degrees;   forming an adhesive material on the first portion of the lead frame;   attaching a carrier to the lead frame with the adhesive material;   attaching an integrated circuit to the adhesive material;   forming an interconnect on the integrated circuit; and   forming a protective material on the integrated circuit.   
     
     
         9 . The method of  claim 8 , wherein the angle is in the range from about 85 degrees to about 95 degrees. 
     
     
         10 . The method of  claim 8 , wherein forming the protective layer comprises the step of:
 heating an epoxy material to a temperature in the range from about 120° C. to about 150° C. to harden the epoxy material.   
     
     
         11 . The method of  claim 8 , further comprising removing the carrier and the adhesive material by heating an epoxy material to a temperature from about 175° C. to about 260° C. to thermally release the adhesive material and carrier. 
     
     
         12 . The method of  claim 11 , further comprising the steps:
 removing a portion of the hardened epoxy material to expose the interconnect and the first portion of the lead frame; and   removing the second portion of the lead frame.   
     
     
         13 . The method of  claim 12 , wherein removing the portion of hardened epoxy material comprises grinding an upper surface of the hardened compound. 
     
     
         14 . The method of  claim 12 , further comprising the steps of:
 forming a conductive material on the hardened compound;   forming a passivation layer on the conductive material; and   faulting a solder ball on the passivation layer, wherein the solder ball is electrically coupled to the conductive material.   
     
     
         15 . A method of making an integrated circuit package, comprising the steps of:
 forming a lead frame comprising a first portion and a second portion, wherein the first portion and the second portion intersect at an angle ranging from about 45 degrees to about 135 degrees;   adhering a double-sided thermal tape to a bottom surface of the first portion of the lead frame;   attaching a carrier to the lead frame with the double-sided thermal tape;   attaching an integrated circuit to the double-sided thermal adhesive tape adjacent to the first portion of the lead frame;   forming at least one pillar interconnect on the integrated circuit;   forming a compressive compound over the integrated circuit and the first and second portions of the lead frame; and   hardening the compressive compound by heating the compressive compound to a temperature in the range from about 120° C. to about 150° C.   
     
     
         16 . The method of  claim 15 , further comprising the steps:
 removing a portion of the hardened molding to expose the pillar interconnect and the second portion of the lead frame; and   removing the first portion of the lead frame.   
     
     
         17 . The method of  claim 16 , wherein the removing the portion of compressive molding step comprises grinding an upper surface of the compressive molding. 
     
     
         18 . The method of  claim 17 , further comprising the steps of:
 forming a conductive material on the hardened molding;   forming a first passivation layer on an upper surface of the conductive material;   forming a second passivation layer on a lower surface of the compressive molding material; and   forming a solder ball on the first passivation layer, wherein the solder ball is electrically coupled to the conductive material.   
     
     
         19 . The method of  claim 15 , wherein the compressive molding material comprises an epoxy material. 
     
     
         20 . The method of  claim 18 , further comprising the steps of attaching a component to the lower surface of the compressive molding.

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