Integrated circuit package and method of forming the same
Abstract
Aspects of the invention are directed towards an integrated circuit package and method of forming the same, and more particularly to a redistributed chip packaging for an integrated circuit. The integrated circuit package includes an integrated circuit having a protective material on at least a portion of the integrated circuit. A lead frame is coupled to the integrated circuit and a conductive layer is also coupled to the interconnect. A solder ball is coupled to the conductive layer and a passivation layer is on the conductive layer. Active and passive components are electrically coupled to the integrated circuit.
Claims
exact text as granted — not AI-modified1 . An integrated circuit package, comprising:
an integrated circuit; a protective material on at least a portion of the integrated circuit; a lead frame coupled to the integrated circuit; a conductive layer coupled to the interconnect; a solder ball coupled the conductive layer; and a passivation layer on the conductive layer.
2 . The integrated circuit package of claim 1 , wherein the protective material comprises a compressive molding compound.
3 . The integrated circuit package of claim 2 , wherein the compressive molding compound comprises epoxy.
4 . The integrated circuit package of claim 1 , wherein the lead frame comprises a material selected from the group consisting of Al, Au, Cu, and combinations thereof.
5 . The integrated circuit package of claim 1 , wherein the passivation layer comprises an insulating polymer selected from the group consisting of parylene, polyimide, benzocyclobutene (BCB), and polybenzoxazole (PBO).
6 . The integrated circuit package of claim 1 , wherein the lead frame comprises a conductive material selected from the group consisting of Au, Al, Cu, Ti, and alloys of the same.
7 . The integrated circuit package of claim 1 , further comprising at least one of active and passive components electrically coupled to the integrated circuit.
8 . A method of forming an integrated circuit package, comprising the steps of:
forming a lead frame comprising a first portion and a second portion, wherein the first portion and the second portion intersect at an angle ranging from about 45 degrees to about 135 degrees; forming an adhesive material on the first portion of the lead frame; attaching a carrier to the lead frame with the adhesive material; attaching an integrated circuit to the adhesive material; forming an interconnect on the integrated circuit; and forming a protective material on the integrated circuit.
9 . The method of claim 8 , wherein the angle is in the range from about 85 degrees to about 95 degrees.
10 . The method of claim 8 , wherein forming the protective layer comprises the step of:
heating an epoxy material to a temperature in the range from about 120° C. to about 150° C. to harden the epoxy material.
11 . The method of claim 8 , further comprising removing the carrier and the adhesive material by heating an epoxy material to a temperature from about 175° C. to about 260° C. to thermally release the adhesive material and carrier.
12 . The method of claim 11 , further comprising the steps:
removing a portion of the hardened epoxy material to expose the interconnect and the first portion of the lead frame; and removing the second portion of the lead frame.
13 . The method of claim 12 , wherein removing the portion of hardened epoxy material comprises grinding an upper surface of the hardened compound.
14 . The method of claim 12 , further comprising the steps of:
forming a conductive material on the hardened compound; forming a passivation layer on the conductive material; and faulting a solder ball on the passivation layer, wherein the solder ball is electrically coupled to the conductive material.
15 . A method of making an integrated circuit package, comprising the steps of:
forming a lead frame comprising a first portion and a second portion, wherein the first portion and the second portion intersect at an angle ranging from about 45 degrees to about 135 degrees; adhering a double-sided thermal tape to a bottom surface of the first portion of the lead frame; attaching a carrier to the lead frame with the double-sided thermal tape; attaching an integrated circuit to the double-sided thermal adhesive tape adjacent to the first portion of the lead frame; forming at least one pillar interconnect on the integrated circuit; forming a compressive compound over the integrated circuit and the first and second portions of the lead frame; and hardening the compressive compound by heating the compressive compound to a temperature in the range from about 120° C. to about 150° C.
16 . The method of claim 15 , further comprising the steps:
removing a portion of the hardened molding to expose the pillar interconnect and the second portion of the lead frame; and removing the first portion of the lead frame.
17 . The method of claim 16 , wherein the removing the portion of compressive molding step comprises grinding an upper surface of the compressive molding.
18 . The method of claim 17 , further comprising the steps of:
forming a conductive material on the hardened molding; forming a first passivation layer on an upper surface of the conductive material; forming a second passivation layer on a lower surface of the compressive molding material; and forming a solder ball on the first passivation layer, wherein the solder ball is electrically coupled to the conductive material.
19 . The method of claim 15 , wherein the compressive molding material comprises an epoxy material.
20 . The method of claim 18 , further comprising the steps of attaching a component to the lower surface of the compressive molding.Join the waitlist — get patent alerts
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