Substrate support with gas introduction openings

Abstract

Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

1 . An apparatus, comprising:
 a substrate support having a plurality of first holes therethrough having a first diameter;   a vacuum pump coupled with each of the plurality of first holes in the substrate support; and   a gas supply coupled with each of the plurality of first holes in the substrate support.   
     
     
         2 . The apparatus of  claim 1 , wherein the apparatus is a plasma enhanced chemical vapor deposition apparatus. 
     
     
         3 . The apparatus of  claim 1 , wherein the substrate support has a plurality of second holes therethrough having a second diameter, the apparatus further comprising:
 a lift pin movably disposed within each of the plurality of second holes.   
     
     
         4 . The apparatus of  claim 3 , wherein the plurality of second holes are spaced further from the center of the substrate support than the plurality of first holes. 
     
     
         5 . The apparatus of  claim 1 , wherein the substrate support is coupled to a support shaft, the apparatus further comprising:
 one or more tubes extending through the support shaft and coupled to the substrate support at a location corresponding to the plurality of first openings, the one or more tubes additionally coupled to at least one of the gas supply and the vacuum pump.   
     
     
         6 . A method, comprising:
 inserting a substrate into a processing chamber;   positioning the substrate onto one or more lift pins;   causing relative movement between the one or more lift pins and a substrate support to place the substrate in a position in contact with the substrate; and   evacuating gas from at least one space between the substrate and the substrate support such that the substrate is pulled into a position substantially flush with the substrate support, the evacuating occurring through the substrate support.   
     
     
         7 . The method of  claim 6 , wherein the substrate rests on the one or more lift pins such that a center of the substrate sags towards the substrate support. 
     
     
         8 . The method of  claim 6 , further comprising moving the substrate support relative to the one or more lift pins by moving the substrate support from a position spaced from the substrate to the position in contact with the substrate, wherein the substrate support contacts the substrate in a center to edge progression. 
     
     
         9 . The method of  claim 6 , further comprising:
 evacuating the processing chamber, wherein the evacuating gas from at least one space between the substrate and the substrate support is separate from the evacuating of the processing chamber.   
     
     
         10 . The method of  claim 6 , wherein the substrate support has a plurality of openings therethrough to permit the gas to be evacuated through the substrate support. 
     
     
         11 . The method of  claim 6 , wherein the method is a plasma enhanced chemical vapor deposition method. 
     
     
         12 . The method of  claim 6 , further comprising:
 igniting a plasma within the processing chamber;   inject a gas between the substrate support and the substrate; and   lowering the substrate support or raising the one or more lift pins to space the substrate from the substrate support.   
     
     
         13 . The method of  claim 12 , wherein the gas injected is a noble gas. 
     
     
         14 . A method, comprising:
 igniting a plasma within a processing chamber containing a substrate support having a substrate thereon;   injecting a first gas between the substrate support and the substrate; and   causing relative movement between the substrate support and one or more lift pins to space the substrate from the substrate support.   
     
     
         15 . The method of  claim 14 , wherein the first gas is a noble gas. 
     
     
         16 . The method of  claim 14 , further comprising injecting a second gas into the processing chamber prior to igniting a plasma, wherein the second gas is injected at a different location than the first gas. 
     
     
         17 . The method of  claim 14 , wherein the method is a plasma enhanced chemical vapor deposition method. 
     
     
         18 . The method of  claim 14 , wherein the substrate is supported by one or more lift pins during the relative movement. 
     
     
         19 . The method of  claim 14 , wherein the first gas is injected through the substrate support. 
     
     
         20 . The method of  claim 14 , wherein the substrate support spaces from the substrate in an edge to center progression.