Semiconductor Chip Having a Photodiode, Semiconductor Device and Manufacturing Method Thereof

Abstract

A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10 . First bumps 12 are formed outside light-receiving region R. Second bump 13 is formed in a ring-shape around light-receiving region R between region R and first bumps 12 . Semiconductor chip T is assembled on assembly substrate S, and resin layer 30 is formed between chip T and substrate S in the region outside of said light-receiving region R.

1 - 6 . (canceled) 
   
   
       7 . A manufacturing method for a semiconductor chip comprising the steps of:
 forming a first semiconductor region of a first electroconductive type on a substrate;   forming a second semiconductor region of a second electroconductive type on said first semiconductor region in a light-receiving region, wherein said first and second semiconductor regions form a photodiode;   forming first bumps on a principal surface of said first semiconductor region in a region outside said light-receiving region;   forming a second bump in a ring-shape around the light-receiving region between said light-receiving region and said first bumps.   
   
   
       8 . The manufacturing method for a semiconductor chip described in  claim 7 , wherein said first bumps and said second bump are formed with nearly the same height. 
   
   
       9 . The manufacturing method for a semiconductor chip described in  claim 7 , wherein said first bumps and said second bump are formed at the same time. 
   
   
       10 . A manufacturing method for a semiconductor device, comprising the steps of:
 forming a semiconductor chip, wherein the semiconductor chip formation comprises the following steps:
 forming a first semiconductor region of a first electroconductive type; 
 forming a second semiconductor region of a second electroconductive type at a surface of the first semiconductor region in a light-receiving region, wherein said first and second semiconductor regions form a photodiode; 
 forming first bumps on a principal surface of said first semiconductor region in a region outside said light-receiving region; 
 forming a second bump in a ring-shape around the light-receiving region between said light-receiving region and said first bumps; 
   assembling said semiconductor chip on an assembly substrate with electrodes by connecting said first bumps and said second bump to said electrodes of the assembly substrate; and   forming a resin layer between said semiconductor chip and said assembly substrate in a region outside of said light-receiving region.   
   
   
       11 . The manufacturing method for a semiconductor device described in  claim 10 , wherein said first bumps and said second bump are formed with nearly the same height. 
   
   
       12 . The manufacturing method for a semiconductor device described in  claim 10 , wherein the steps for forming said first bumps and forming said second bump are performed at the same time. 
   
   
       13 . The manufacturing method for a semiconductor device described in  claim 10 , wherein in the step for forming said resin layer, said second bump becomes the dike for said resin layer. 
   
   
       14 . The manufacturing method for a semiconductor device described in  claim 10 , wherein said assembly substrate has a through-opening formed at a region corresponding to said light-receiving region and wherein said semiconductor chip is assembled on said assembly substrate such that said light-receiving region faces said through-opening.