Apparatus and method of depositing films using bias and charging behavior of nanoparticles formed during chemical vapor deposition

Abstract

Provided are an apparatus and a method of depositing films capable of controlling deposition rate and film properties using the charging behavior of nanoparticles formed in gas phase. The apparatus includes a chamber in which a substrate is loaded, a gas supply system configured to introduce a reaction gas into the chamber, a filament configured to emit heat for dissociating the introduced reaction gas, a power supply configured to apply a constant alternate current or direct current voltage, and a bias supply unit configured to apply a bias to at least one of a top, a side and a bottom of the substrate using a voltage applied from the power supply while a film is deposited on the substrate from the dissociated reaction gas, the bias supply unit being separated from the substrate.

1 - 20 . (canceled) 
   
   
       21 . A method of depositing films, the method comprising:
 controlling a generation behavior associated with a charged behavior including a size, a number concentration, a charge amount and a charge ratio of a charged nanoparticle formed in gas phase by adjusting a process parameter including a reaction temperature, an amount of a reaction gas and a reaction pressure in a chemical vapor deposition (CVD) process; and   controlling a deposition behavior of the charged nanoparticle using variations in an electric field intensity and a polarity through a bias unit.   
   
   
       22 . An apparatus of depositing films, the apparatus comprising:
 a chamber in which a substrate is loaded and a pressure is maintained at an atmospheric pressure, a low pressure or a high pressure;   a gas supply system configured to introduce a reaction gas into the chamber;   a heating element configured to emit heat for dissociating the introduced reaction gas; and   a bias supply device configured to apply an electric field to the substrate,   wherein the bias supply device comprises:   a first plate disposed over the substrate;   a second plate disposed under the substrate, and facing the first plate:   a power supply configured to apply a constant AC or DC voltage to one of the first and second plates; and   a ground unit configured to ground the other of the first and second plates.   
   
   
       23 . An apparatus of depositing films, the apparatus comprising:
 a chamber in which a substrate is loaded and a pressure is maintained at an atmospheric pressure, a low pressure or a high pressure;   a gas supply system configured to introduce a reaction gas into the chamber;   a heating element configured to emit heat for dissociating the introduced reaction gas; and   a bias supply device configured to apply an electric field to the substrate,   wherein the substrate is disposed on a surface of the second plate opposite to the first plate,   the first plate being connected to the ground unit, and the second plate being connected to the power supply.   
   
   
       24 . An apparatus of depositing films, the apparatus comprising:
 a chamber in which a substrate is loaded and a pressure is maintained at an atmospheric pressure, a low pressure or a high pressure;   a gas supply system configured to introduce a reaction gas into the chamber;   a heating element configured to emit heat for dissociating the introduced reaction gas; and   a bias supply device configured to apply an electric field to the substrate,   wherein the bias supply device draws a charged nanoparticles, which is nucleated and grown from the dissociated reaction gas, toward the substrate.   
   
   
       25 . The apparatus of claim  4 , wherein the gas supply system additionally introduces a carrier gas facilitating the movement of the charged nanoparticle into the chamber,
 the gas supply system comprising a gas flowmeter configured to control a movement rate of the charged nanoparticle by controlling a flow rate of the carrier gas.   
   
   
       26 . A method of depositing films, the method comprising:
 loading a substrate in the chamber and introducing a reaction gas;   
     dissociating the reaction gas;
 triggering nucleation in the dissociated reaction gas; 
 forming a charged nanoparticle through growth of a nanoparticle generated from the nucleation; and 
 applying a bias to the substrate to deposit a film by drawing the charged nanoparticle toward the substrate. 
 
   
   
       27 . The method of claim  6 , wherein the depositing of the film is performed using a hot-filament or hot-wire chemical vapor deposition (HFCVD or HWCVD) apparatus, a plasma CVD apparatus or an atmospheric pressure CVD (APCVD) apparatus. 
   
   
       28 . The method of claim  6 , wherein the charged nanoparticle is formed in gas phase by adjusting a dissociation degree of the reaction gas, and an electrical polarity ratio between positively and negatively charged nanoparticles is controlled. 
   
   
       29 . The method of claim  6 , wherein the substrate is formed of a conductive material, and a deposition rate increases by applying a bias of which a polarity is opposite to a polarity of the charged nanoparticle dominantly existing in the nanoparticles formed in gas phase. 
   
   
       30 . The method of claim  6 , wherein the substrate is formed of one of a nonconductive material and a plastic, and a deposition rate increases by applying a bias, of which a polarity is the same as a polarity of the charged nanoparticle dominantly existing in the nanoparticles formed in gas phase, to a periphery of the substrate. 
   
   
       31 . The method of claim  6 , wherein the substrate is formed of one of a nonconductive material and a plastic, and a degree of crystallinity of a film increases by increasing an electrical polarity ration of the nanoparticles. 
   
   
       32 . The method of claim  6 , wherein a mixed gas of silane and hydrogen is used as the reaction gas, and at least one of a fraction and a size of the nanoparticle charged in gas phase changes by increasing at least one selected from a dissociation temperature of the reaction gas, a fraction of the silane in the mixed gas and a pressure of the mixed gas. 
   
   
       33 . The method of claim  6 , wherein the bias is applied to a top of the substrate to thereby change an electrical polarity ratio of the nanoparticle to be deposited, by changing the charge amount of the nanoparticle before the nanoparticles are deposited on the substrate. 
   
   
       34 . The method of claim  13 , wherein a film deposition is divided into a nucleation and a growth, and an electrical polarity ratio of nanoparticles to be deposited changes by changing at least one of a fraction and a size of the nanoparticle charged in gas phase in each of the nucleation and the growth and changing the charge amount of the nanoparticles before the nanoparticles are deposited on the substrate. 
   
   
       35 . The method of claim  6 , wherein one of a silicon film, a carbon nanotube and a nanowire is deposited using the method, and the silicon film comprises one of a single crystalline silicon film, an amorphous silicon film and a poly crystalline silicon film. 
   
   
       36 . The method of claim  6 , wherein a voltage for applying the bias is in the range of approximately +1,000 V to approximately −1,000 V, and a DC or an AC having a frequency ranging from approximately 0.01 Hz to approximately 10 kHz is applied. 
   
   
       37 . The method of claim  6 , wherein the bias is applied such that its polarity is periodically or arbitrarily alternated.