Cleaning method

Abstract

In a process chamber of a substrate processing apparatus, such as an RTP apparatus, a carrier is placed and configured to carry out a contaminant that has been attached to it. In this state, a cleaning gas containing N 2 and O 2 is introduced into the process chamber, and cleaning is performed under conditions including a pressure of 133.3 Pa or less and a temperature of 700° C. to 1,100° C. This cleaning is repeatedly performed by sequentially replacing a plurality of carriers.

1 . A substrate processing apparatus comprising:
 a process chamber including therein a process space having an inner surface defined by a quartz member and configured to accommodate a target substrate;   a heating device configured to heat the target substrate in the process chamber;   a pressure-reducing device configured to reduce a pressure inside the process chamber; and   a controller configured to control an operation of the substrate processing apparatus,   wherein the controller is preset to perform a cleaning method for removing a metal existing as a contaminant in the process space, the cleaning method comprising:   introducing a cleaning gas containing N 2  and O 2  at a flow rate ratio (N 2 :O 2 ) of 1:0.1 to 3 into the process space, and performing cleaning under conditions including a pressure of 1.3 Pa to 666.6 Pa and a temperature of 900° C. to 1,100° C., while placing a contaminant removal carrier in the process space, thereby changing the metal to a secondary substance with a higher vapor pressure and allowing the secondary substance to be deposited on the contaminant removal carrier, and   then, unloading the contaminant removal carrier with part of the secondary substance deposited thereon from the process space.   
   
   
       2 . The apparatus according to  claim 1  wherein the heating device includes an upper heat generating unit and a lower heat generating unit configured to heat the process space from above and from below, respectively. 
   
   
       3 . The apparatus according to  claim 1 , wherein the apparatus further comprises a support mechanism configured to support the target substrate, the support mechanism includes substrate support pins configured to support and hold the target substrate inside the process space, and a liner setting portion configured to support a hot liner serving as a measurement target for measuring a temperature of the target substrate. 
   
   
       4 . The apparatus according to  claim 3 , wherein the apparatus further comprises a pyrometer configured to measure heat rays from the hot liner, thereby grasping a temperature of the target substrate. 
   
   
       5 . The apparatus according to  claim 3 , wherein the support mechanism is configured to rotate about a vertical axis along with the target substrate supported thereon. 
   
   
       6 . A substrate processing apparatus comprising:
 a process chamber including therein a process space having an inner surface defined by a quartz member and configured to accommodate a target substrate:   a heating device configured to heat the target substrate in the process chamber, and including an upper heat generating unit and a lower heat generating unit configured to heat the process space from above and from below, respectively;   a pressure-reducing device configured to reduce a pressure inside the process chamber;   a support mechanism configured to support the target substrate and to rotate about a vertical axis along with the target substrate supported thereon, the support mechanism including substrate support pins configured to support and hold the target substrate inside the process space, and a liner setting portion configured to support a hot liner serving as a measurement target for measuring a temperature of the target substrate; and   a pyrometer configured to measure heat rays from the hot liner, thereby grasping a temperature of the target substrate.   
   
   
       7 . The apparatus according to  claim 6 , wherein the upper heat generating unit includes an upper body disposed above a quartz ceiling plate defining the process space and heating lamps arranged on the upper body to face the quartz ceiling plate, and the lower heat generating unit includes an lower body disposed below a quartz floor plate defining the process space and heating lamps arranged on the lower body to face the quartz floor plate. 
   
   
       8 . The apparatus according to  claim 7 , wherein each of the upper body and the lower body comprises a water-cooling jacket. 
   
   
       9 . The apparatus according to  claim 7 , wherein the upper body and the lower body are combined as a top wall and a bottom wall with a sidewall of the process chamber and thereby form the process chamber, and the quartz ceiling plate and the quartz floor plate are combined with a quartz side plate and thereby define the process space inside the process chamber. 
   
   
       10 . The apparatus according to  claim 7 , wherein the pyrometer is disposed below the quartz floor plate.