Polishing pads for chemical mechanical planarization and/or other polishing methods

Abstract

Embodiments herein provide polishing pads that produce high post-polish planarity, such as on a wafer substrate or other substrates. Exemplary pads include a bulk matrix and embedded polymer particles. Pads according to embodiments herein may be used to remove material over a composite substrate, comprised of two or more different materials, or a substrate comprised of a single material.

1 . A polishing pad, comprising:
 a matrix comprising a siloxane polymer having a loss factor, tan (δ), of at least 0.05; and   a plurality of polymer particles embedded within the matrix, the polymer particles having a different chemical composition from that of the matrix.   
     
     
         2 . The polishing pad of  claim 1 , wherein the matrix has a storage modulus of about 1×10 5  Pa to about 1×10 7  Pa and a loss modulus of about 1×10 4  Pa to about 1×10 6  Pa. 
     
     
         3 . The polishing pad of  claim 1 , wherein the polishing pad defines a pad volume, and the polymer particles comprise approximately 10 to 30% of the pad volume. 
     
     
         4 . The polishing pad of  claim 1 , wherein the polymer particles comprise at least one of polyurethane, polyurea, polycarbonate, polyether, polyester, polysulfone, polystyrene, polyamide, polyacrylamide, polypropylene, polyethylene, polybutadiene, polyvinyl chloride, polymethyl methacrylate, polyvinyl alcohol, and nylon. 
     
     
         5 . The polishing pad of  claim 1 , further comprising a supporting layer coupled to the matrix. 
     
     
         6 . The polishing pad of  claim 5 , wherein the supporting layer comprises at least one of polyester, glass, nylon, rayon and cotton. 
     
     
         7 . The polishing pad of  claim 1 , wherein the matrix comprises at least one groove or pattern in a surface thereof. 
     
     
         8 . A polishing pad, comprising:
 a matrix comprising a material having a storage modulus of about 1×10 5  Pa to about 1×10 7  Pa and a loss modulus of about 1×10 4  Pa to about 1×10 6  Pa; and   a plurality of polymer particles embedded within the matrix and having a mean particle diameter of approximately 10 to 100 μm.   
     
     
         9 . The polishing pad of  claim 8 , wherein the loss modulus of the matrix material is about 1×10 5  Pa. 
     
     
         10 . The polishing pad of  claim 8 , wherein the matrix material comprises a loss factor, tan (δ), of at least 0.05. 
     
     
         11 . The polishing pad of  claim 8 , wherein the matrix material comprises a loss factor, tan (δ), of at least 0.1. 
     
     
         12 . The polishing pad of  claim 8 , wherein the polishing pad has a thickness of 10 to 200 mils. 
     
     
         13 . The polishing pad of  claim 8 , wherein the polymer particles are randomly distributed in the matrix. 
     
     
         14 . The polishing pad of  claim 8 , wherein the polymer particles are relatively uniformly distributed throughout the matrix. 
     
     
         15 . The polishing pad of  claim 8 , wherein the polishing pad defines a pad volume, and the polymer particles comprise approximately 10 to 30% of the pad volume. 
     
     
         16 . The polishing pad of  claim 8 , wherein the matrix material comprises a siloxane polymer. 
     
     
         17 . The polishing pad of  claim 8 , wherein the matrix material comprises crosslinked polydimethylsiloxane. 
     
     
         18 . The polishing pad of  claim 8 , wherein the matrix material comprises fluorinated polydimethylsiloxane. 
     
     
         19 . The polishing pad of  claim 8 , wherein the matrix further comprises silica filler particles. 
     
     
         20 . The polishing pad of  claim 8 , wherein the polymer particles comprise at least one of polyurethane, polyurea, polycarbonate, polyether, polyester, polysulfone, polystyrene, polyamide, polyacrylamide, polypropylene, polyethylene, polybutadiene, polyvinyl chloride, polymethyl methacrylate, polyvinyl alcohol, and nylon. 
     
     
         21 . The polishing pad of  claim 8 , wherein the polymer particles comprise hydroxylated polyester particles. 
     
     
         22 . The polishing pad of  claim 21 , wherein the hydroxylated polyester particles have a mean particle diameter of approximately 60 μm. 
     
     
         23 . The polishing pad of  claim 21 , wherein the polishing pad defines a pad volume, wherein the hydroxylated polyester particles comprise approximately 20% of the volume of the pad. 
     
     
         24 . The polishing pad of  claim 8 , further comprising a supporting layer coupled to the matrix. 
     
     
         25 . The polishing pad of  claim 24 , wherein the supporting layer comprises at least one of polyester, glass, nylon, rayon and cotton. 
     
     
         26 . The polishing pad of  claim 8 , wherein the matrix comprises at least one groove or pattern in a surface thereof. 
     
     
         27 . A method of polishing a surface of a substrate, comprising:
 providing a substrate; and   contacting the substrate with a polishing pad, whereby the polishing pad and/or the substrate are moved relative to the other of the polishing pad and the substrate while in contact, the polishing pad comprising:
 a matrix comprising a material having a storage modulus of about 1×10 5  Pa to about 1×10 7  Pa and a loss modulus of about 1×10 4  Pa to about 1×10 6  Pa; and 
 polymer particles embedded within the matrix and having a mean particle diameter of approximately 10 to 100 μm. 
   
     
     
         28 . The method of  claim 27 , wherein the substrate has a line to be polished, the line having a linewidth, and wherein the mean particle diameter of the polymer particles is at least approximately 2-20 times larger than the linewidth of the line to be polished.