US2010177799A1PendingUtilityA1

Surface light emitting semiconductor laser element

Assignee: SONY CORPPriority: May 19, 2003Filed: Mar 22, 2010Published: Jul 15, 2010
Est. expiryMay 19, 2023(expired)· nominal 20-yr term from priority
H01S 5/0425H01S 5/04254H01S 2301/18H01S 5/2214G02B 6/4296H01S 5/18388H01S 5/18311H01S 5/32308H01S 5/18394H01S 2301/203H01S 2301/176H01S 5/18375H01S 5/02253H01S 5/02251
51
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Claims

Abstract

A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

Claims

exact text as granted — not AI-modified
1 - 2 . (canceled) 
     
     
         3 . A surface light emitting semiconductor laser element, comprising:
 a substrate,   a lower reflector disposed over the substrate,   an active layer disposed over the lower reflector,   an upper reflector disposed over the active layer,   a compound semiconductor layer formed partially over the upper reflector and defining a first opening above the upper reflector where the compound semiconductor layer is not formed, and   a metal film including an annular film and an island-like film, the annular film formed partially over the compound semiconductor layer and upper reflector and defining a second opening above the upper reflector where the metal film is not formed such that the second opening is contained within the first opening, and the island-like film being disposed like an island over the upper reflector and within the second opening,   wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure such that a complex refractive index is changed from substantially the center of the second opening towards the outside.   
     
     
         4 - 14 . (canceled)

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