CMP Slurry Composition for Copper Damascene Process

Abstract

The present invention relates to a CMP slurry composition for copper damascene process of semiconductor manufacturing process. The barrier CMP slurry composition for copper damascene process of the present invention does not include an oxidant, so that it exhibits excellent reproducibility of polishing performance, low etching speed, and adequate polishing speed for copper layer, silicon oxide film and Ta-based film. Thus, the slurry composition of the invention has such advantages as easy dishing or erosion removal, excellent dispersion stability, and low scratch level, making it excellent barrier CMP slurry composition for copper damascene process.

1 . A CMP (chemical mechanical polishing) slurry composition for copper damascene process, which is characteristically comprising, based on the total weight of slurry, 0.5-12 weight % of an abrasive and an additive selected from the following a)-c), and has pH of 2-12, but does not include an oxidant.
 a) 0.001-1 weight % of organic phosphoric acid or its salt;   b) 0.001-5 weight % of one or more compounds or their salts selected from the group consisting of gluconic acid, morpholin, taurine, adipic acid and amino alcohol; or   c) 0.001-0.5 weight % of one or more compounds or their salts selected from the group consisting of gluconic acid, morpholin, taurine, adipic acid, citric acid and amino alcohol in addition to 0.001-1.0 weight % of organic phosphoric acid or its salt.   
   
   
       2 . The CMP slurry composition for copper damascene process according to  claim 1 , wherein the abrasive is selected from the group consisting of fumed silica, colloid silica, alumina, ceria, zirconium oxide, zeolite and a mixture thereof. 
   
   
       3 . The CMP slurry composition for copper damascene process according to  claim 2 , wherein the abrasive is fumed silica or colloid silica and the content of the abrasive is 1-10 weight %. 
   
   
       4 . The CMP slurry composition for copper damascene process according to  claim 1 , wherein pH is regulated by a pH regulator selected from the group consisting of potassium hydroxide, ammonium hydroxide, tetramethylammonium hydroxide, nitric acid, hydrochloric acid, sulfuric acid, perchloric acid, phosphoric acid and a mixture thereof. 
   
   
       5 . The CMP slurry composition for copper damascene process according to  claim 1 , wherein the aminoalcohol of b) or c) is selected from the group consisting of 2-amino-2-methyl-1-propanol, 3-amino-1-propanol, 2-amino-1-propanol, 1-amino-2-propanol, 1-amino-pentanol, 2-(2-aminoethylamino)ethanol, 2-dimethylamino-2-methyl-1-propanol, N,N-diethylethanolamine, monoethanolamine, diethanolamine, triethanolamine and a mixture thereof. 
   
   
       6 . The CMP slurry composition for copper damascene process according to  claim 5 , wherein the aminoalcohol of b) or c) is selected from the group consisting of monoethanolamine, 2-amino-2-methyl-1-propanol, 2-dimethylamino-2-methyl-1-propanol and a mixture thereof. 
   
   
       7 . The CMP slurry composition for copper damascene process according to  claim 1 , wherein the organic phosphoric acid or its salt of a) or c) is selected from the group consisting of the compounds represented by the following formula 1 and formula 2. 
     
       
         
         
             
             
         
       
       Wherein, R 1 -R 6  are independently H, C 1 -C 8  alkyl or B 1 —P(O)(OM 3 ) 2 ; A 1 -A 4  and B 1  are independently C 1 -C 6  alkylene; n is 0 or 1; and M 1 -M 3  are independently H, ammonium, sodium or potassium. 
     
   
   
       8 . The CMP slurry composition for copper damascene process according to  claim 7 , wherein the organic phosphoric acid of a) or c) is one or more compounds selected from the group consisting of 2-aminoethyl phosphoric acid, nitrilotris(methylene)triphosphonic acid, diethylenetriaminepenta(methylenephosphonic acid), hexamethylenediaminetetra(methylenephosphonic acid) and ethylenediaminetetra(methylenephosphonic acid). 
   
   
       9 . The CMP slurry composition for copper damascene process according to  claim 7 , wherein the aminoalcohol is additionally included in a) by 0.001-2 weight % for the total weight of the slurry. 
   
   
       10 . The CMP slurry composition for copper damascene process according to  claim 9 , wherein the aminoalcohol of a) is selected from the group consisting of 2-amino-2-methyl-1-propanol, 3-amino-1-propanol, 2-amino-1-propanol, 1-amino-2-propanol, 1-amino-pentanol, 2-(2-aminoethylamino)ethanol, 2-dimethylamino-2-methyl-1-propanol, N,N-diethylethanolamine, monoethanolamine, diethanolamine, triethanolamine and a mixture thereof and is additionally added by 0.01-0.5 weight % for the total weight of the slurry. 
   
   
       11 . The CMP slurry composition for copper damascene process according to  claim 10 , which characteristically comprises 1-10 weight % of fumed silica or colloid silica; 0.01-0.5 weight % of ethylenediaminetetra(methylenephosphonic acid) or nitrilotris(methylene)triphosphonic acid; potassium hydroxide or ammonium hydroxide to regulate pH to 8-12; and 0.01-0.5 weight % of monoethanolamine or 2-amino-2-methyl-1-propanol. 
   
   
       12 . The CMP slurry composition for copper damascene process according to  claim 1 , which characteristically comprises 0.5-12 weight % of fumed silica or colloid silica; and 0.001-5 weight % of one or more additive compounds or their salts selected from the group consisting of gluconic acid, morpholin, taurine, adipic acid and amino alcohol, and has pH of 2-12. 
   
   
       13 . The CMP slurry composition for copper damascene process according to  claim 12 , which characteristically comprises 1-10 weight % of fumed silica or colloid silica; 0.01-1.0 weight % of one or more additive compounds or their salts selected from the group consisting of taurine, gluconic acid, 2-amino-2-methyl-1-propanol and monoethanolamine; and potassium hydroxide or ammonium hydroxide to regulate pH to 8-12. 
   
   
       14 . The CMP slurry composition for copper damascene process according to  claim 1 , which characteristically comprises 0.5-12 weight % of fumed silica or colloid silica; 0.001-0.5 weight % of one or more compounds or their salts selected from the group consisting of gluconic acid, morpholin, taurine, adipic acid, citric acid and amino alcohol; and 0.001-1.0 weight % of nitrilotris(methylene)triphosphonic acid or its salt and has pH of 2-12. 
   
   
       15 . The CMP slurry composition for copper damascene process according to  claim 14 , which characteristically comprises 1-10 weight % of fumed silica or colloid silica; 0.01-0.4 weight % of one or more compounds or their salts selected from the group consisting of citric acid, 2-amino-2-methyl-1-propanol, monoethanolamine; and 0.01-0.4 weight % of an additive selected from the group consisting of nitrilotris(methylene)triphosphonic acid (NTPA) and its salt; and potassium hydroxide or ammonium hydroxide to regulate pH to 8-12. 
   
   
       16 . The CMP slurry composition for copper damascene process according to any of  claim 9 ,  claim 12  or  claim 14 , which additionally includes 0.0001-0.1 weight % of an corrosion inhibitor selected from the group consisting of benzotriazole, 5-aminotetrazol, 1-alkyl-5-aminotetrazol, 5-hydroxy-tetrazol, 1-alkyl-5-hydroxy-tetrazol, tetrazol-5-thiol, imidazole and a mixture thereof. 
   
   
       17 . The CMP slurry composition for copper damascene process according to  claim 16 , wherein the corrosion inhibitor is benzotriazole. 
   
   
       18 . A method for preparing semiconductor device, which is characterized by including the barrier CMP process for copper damascene process using the slurry composition of  claim 1 .