Semiconductor device and method for manufacturing the same, and electric device

Abstract

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

1 . A semiconductor device comprising:
 a thin film integrated circuit including a thin film transistor, the thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor film having a channel-forming region, the semiconductor film including a metal oxide wherein the metal includes indium; and   an antenna electrically connected to the thin film integrated circuit.   
   
   
       2 . The semiconductor device according to  claim 1 , wherein the thin film transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor. 
   
   
       3 . The semiconductor device according to  claim 1 , wherein the thin film integrated circuit further comprises an element selected from the group consisting of a memory element, a diode, a photoelectric converter, a resistor, a coil, a capacitor, and an inductor. 
   
   
       4 . The semiconductor device according to  claim 1 , further comprising a first cover material and a second cover material,
 wherein the thin film integrated circuit and the antenna are sandwiched between the first cover material and the second cover material.   
   
   
       5 . The semiconductor device according to  claim 4 , further comprising an adhesive, wherein one side of the thin film integrated circuit is attached to the first cover material with the adhesive. 
   
   
       6 . The semiconductor device according to  claim 1 , further comprising an insulating film including at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film,
 wherein the thin film transistor is interposed between the insulating film and the antenna.   
   
   
       7 . The semiconductor device according to  claim 1 , wherein the gate insulating film includes an oxide containing aluminum. 
   
   
       8 . The semiconductor device according to  claim 1 , wherein the gate insulating film includes an oxide containing titanium. 
   
   
       9 . The semiconductor device according to  claim 1 , wherein the antenna is formed from a solvent including a conductor by droplet discharging method. 
   
   
       10 . A semiconductor device comprising:
 a thin film integrated circuit including a thin film transistor, the thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor film having a channel-forming region, the semiconductor film including an In—Ga—Zn—O; and   an antenna electrically connected to the thin integrated circuit.   
   
   
       11 . The semiconductor device according to  claim 10 , wherein the thin film transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor. 
   
   
       12 . The semiconductor device according to  claim 10 , wherein the thin film integrated circuit further comprises an element selected from the group consisting of a memory element, a diode, a photoelectric converter, a resistor, a coil, a capacitor, and an inductor. 
   
   
       13 . The semiconductor device according to  claim 10 , further comprising a first cover material and a second cover material,
 wherein the thin film integrated circuit and the antenna are sandwiched between the first cover material and the second cover material.   
   
   
       14 . The semiconductor device according to  claim 13 , further comprising an adhesive, wherein one side of the thin film integrated circuit is attached to the first cover material with the adhesive. 
   
   
       15 . The semiconductor device according to  claim 10 , further comprising an insulating film including at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film,
 wherein the thin film transistor is interposed between the insulating film and the antenna.   
   
   
       16 . The semiconductor device according to  claim 10 , wherein the gate insulating film includes an oxide containing aluminum. 
   
   
       17 . The semiconductor device according to  claim 10 , wherein the gate insulating film includes an oxide containing titanium. 
   
   
       18 . The semiconductor device according to  claim 10 , wherein the antenna is formed from a solvent including a conductor by droplet discharging method. 
   
   
       19 . A semiconductor device comprising:
 a thin film integrated circuit including a thin film transistor, the thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor film having a channel-forming region, the semiconductor film including a metal oxide wherein the metal includes indium;   an interlayer insulating film formed over the thin film transistor; and   an antenna over the interlayer insulating film, the antenna being electrically connected to the thin film integrated circuit.   
   
   
       20 . The semiconductor device according to  claim 19 , wherein the thin film transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor. 
   
   
       21 . The semiconductor device according to  claim 19 , wherein the thin film integrated circuit further comprises an element selected from the group consisting of a memory element, a diode, a photoelectric converter, a resistor, a coil, a capacitor, and an inductor. 
   
   
       22 . The semiconductor device according to  claim 19 , further comprising a first cover material and a second cover material,
 wherein the thin film integrated circuit and the antenna are sandwiched between the first cover material and the second cover material.   
   
   
       23 . The semiconductor device according to  claim 22 , further comprising an adhesive, wherein one side of the thin film integrated circuit is attached to the first cover material with the adhesive. 
   
   
       24 . The semiconductor device according to  claim 19 , further comprising an insulating film including at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film,
 wherein the thin film transistor is interposed between the insulating film and the antenna.   
   
   
       25 . The semiconductor device according to  claim 19 , wherein the gate insulating film includes an oxide containing aluminum. 
   
   
       26 . The semiconductor device according to  claim 19 , wherein the gate insulating film includes an oxide containing titanium. 
   
   
       27 . The semiconductor device according to  claim 19 , wherein the antenna is formed from a solvent including a conductor by droplet discharging method. 
   
   
       28 . A semiconductor device comprising:
 a thin film integrated circuit including a thin film transistor, the thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor film having a channel-forming region, the semiconductor film including an In—Ga—Zn—O;   an interlayer insulating film formed over the thin film transistor; and   an antenna over the interlayer insulating film, the antenna being electrically connected to the thin film integrated circuit.   
   
   
       29 . The semiconductor device according to  claim 28 , wherein the thin film transistor is any one of a top gate transistor, a bottom gate transistor and a forward stagger transistor. 
   
   
       30 . The semiconductor device according to  claim 28 , wherein the thin film integrated circuit further comprises an element selected from the group consisting of a memory element, a diode, a photoelectric converter, a resistor, a coil, a capacitor, and an inductor. 
   
   
       31 . The semiconductor device according to  claim 28 , further comprising a first cover material and a second cover material,
 wherein the thin film integrated circuit and the antenna are sandwiched between the first cover material and the second cover material.   
   
   
       32 . The semiconductor device according to  claim 31 , further comprising an adhesive, wherein one side of the thin film integrated circuit is attached to the first cover material with the adhesive. 
   
   
       33 . The semiconductor device according to  claim 28 , further comprising an insulating film including at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film,
 wherein the thin film transistor is interposed between the insulating film and the antenna.   
   
   
       34 . The semiconductor device according to  claim 28 , wherein the gate insulating film includes an oxide containing aluminum. 
   
   
       35 . The semiconductor device according to  claim 28 , wherein the gate insulating film includes an oxide containing titanium. 
   
   
       36 . The semiconductor device according to  claim 28 , wherein the antenna is formed from a solvent including a conductor by droplet discharging method.