Remote plasma apparatus for processing substrate with two types of gases

Abstract

In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O 2 ) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH 4 ) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

1 . (canceled) 
   
   
       2 . A remote plasma apparatus comprising:
 a body defining a cavity and having first and second inlets and an inner side wall, the cavity comprising a plasma generation region and a processing region, the first inlet communicating with the plasma generation region to introduce a first gas into the plasma generation region, the second inlet communicating with the processing region to supply a second gas into the processing region;   an energy source arranged and adapted to apply energy within the plasma generation region to generate, from the first gas, plasma including radicals;   a plate arranged between the plasma generation region and the processing region with no gap left between the plate and the inner side wall, the plate being formed with a plurality of perforated holes which the radicals pass through, wherein aperture ratio of the perforated holes to the plate is not greater than five percent; and   a substrate supporter arranged within the processing region and adapted to support a substrate to be processed by using a reaction between the radicals passing through the perforated holes and the second gas supplied through the second inlet.   
   
   
       3 . (canceled) 
   
   
       4 . A remote plasma apparatus as claimed in  claim 2 , wherein:
 the plate comprises, to define a gas supplier plenum, a top portion having a plurality of upper holes, a bottom portion having a plurality of lower holes, a plurality of tube walls connecting between the upper holes and the lower holes, respectively, and a plurality of gas injection holes communicating with the processing region;   the tube walls form the perforated holes and separate the gas supplier plenum from insides of the perforated holes, respectively; and   the second inlet is connected to the gas supplier plenum so as to communicate with the processing region through the gas supplier plenum and the gas injection holes.   
   
   
       5 - 10 . (canceled) 
   
   
       11 . A remote plasma apparatus comprising:
 a body defining a cavity and having first and second inlets, the cavity comprising a plasma generation region and a processing region, the first inlet communicating with the plasma generation region to introduce a first gas into the plasma generation region, the second inlet communicating with the processing region to supply a second gas into the processing region;   an energy source arranged and adapted to apply energy within the plasma generation region to generate, from the first gas, plasma including radicals;   a closure electrode arranged within the cavity and defining the plasma generation region in cooperation with the body, the closure electrode being electrically grounded to allow the radicals to pass through the closure electrode;   a plate arranged within the cavity and defining the processing region in cooperation with the body, the plate being formed with a plurality of perforated holes which the radicals pass through, wherein aperture ratio of the perforated holes to the plate is not greater than five percent; and   a substrate supporter arranged within the processing region and adapted to support a substrate to be processed by using a reaction between the radicals passing through the perforated holes and the second gas supplied through the second inlet.   
   
   
       12 . (canceled) 
   
   
       13 . A remote plasma apparatus as claimed in  claim 11 , wherein:
 the plate comprises, to define a gas supplier plenum, a top portion having a plurality of upper holes, a bottom portion having a plurality of lower holes, a plurality of tube walls connecting between the upper holes and the lower holes, respectively, and a plurality of gas injection holes communicating with the processing region;   the tube walls form the perforated holes and separate the gas supplier plenum from insides of the perforated holes, respectively; and   the second inlet is connected to the gas supplier plenum so as to communicate with the processing region through the gas supplier plenum and the gas injection holes.   
   
   
       14 . A remote plasma apparatus comprising:
 a body defining a cavity and having first and second inlets and an inner side wall, the cavity comprising a plasma generation region and a processing region, the first inlet communicating with the plasma generation region to introduce a first gas into the plasma generation region, the second inlet communicating with the processing region to supply a second gas into the processing region;   an energy source arranged and adapted to apply energy within the plasma generation region to generate, from the first gas, plasma including radicals;   a closure electrode arranged within the cavity and defining the plasma generation region in cooperation with the body, the closure electrode being electrically grounded to allow the radicals to pass through the closure electrode;   a plate arranged within the cavity with no gap left between the plate and the inner side wall so as to define the processing region, the plate being formed with a plurality of perforated holes which the radicals pass through, wherein aperture ratio of the perforated holes to the plate is not greater than five percent; and   a substrate supporter arranged within the processing region and adapted to support a substrate to be processed by using a reaction between the radicals passing through the perforated holes and the second gas supplied through the second inlet.   
   
   
       15 . (canceled) 
   
   
       16 . A remote plasma apparatus as claimed in  claim 14 , wherein:
 the plate comprises, to define a gas supplier plenum, a top portion having a plurality of upper holes, a bottom portion having a plurality of lower holes, a plurality of tube walls connecting between the upper holes and the lower holes, respectively, and a plurality of gas injection holes communicating with the processing region;   the tube walls form the perforated holes and separate the gas supplier plenum from insides of the perforated holes, respectively; and   the second inlet is connected to the gas supplier plenum so as to communicate with the processing region through the gas supplier plenum and the gas injection holes.   
   
   
       17 - 22 . (canceled) 
   
   
       23 . A remote plasma apparatus comprising:
 a body defining a cavity and having first and second inlets, the cavity comprising a plasma generation region and a processing region, the first inlet communicating with the plasma generation region to introduce a first gas into the plasma generation region, the second inlet communicating with the processing region to supply a second gas into the processing region;   an energy source arranged and adapted to apply energy within the plasma generation region to generate, from the first gas, plasma including radicals;   a plate arranged between the plasma generation region and the processing region, the plate being electrically grounded, the plate being formed with a plurality of perforated holes which the radicals pass through, wherein aperture ratio of the perforated holes to the plate is not greater than five percent; and   a substrate supporter arranged within the processing region and adapted to support a substrate to be processed by using a reaction between the radicals passing through the perforated holes and the second gas supplied through the second inlet.   
   
   
       24 . (canceled) 
   
   
       25 . A remote plasma apparatus as claimed in  claim 23 , wherein:
 the plate comprises, to define a gas supplier plenum, a top portion having a plurality of upper holes, a bottom portion having a plurality of lower holes, a plurality of tube walls connecting between the upper holes and the lower holes, respectively, and a plurality of gas injection holes communicating with the processing region;   the tube walls form the perforated holes and separate the gas supplier plenum from insides of the perforated holes, respectively; and   the second inlet is connected to the gas supplier plenum so as to communicate with the processing region through the gas supplier plenum and the gas injection holes.   
   
   
       26 . A remote plasma apparatus comprising:
 a body defining a cavity and having first and second inlets and an inner side wall, the cavity comprising a plasma generation region and a processing region, the first inlet communicating with the plasma generation region to introduce a first gas into the plasma generation region, the second inlet communicating with the processing region to supply a second gas into the processing region;   an energy source arranged and adapted to apply energy within the plasma generation region to generate, from the first gas, plasma including radicals;   a plate arranged between the plasma generation region and the processing region with no gap left between the plate and the inner side wall, the plate being electrically grounded, the plate being formed with a plurality of perforated holes which the radicals pass through, wherein aperture ratio of the perforated holes to the plate is not greater than five percent; and   a substrate supporter arranged within the processing region and adapted to support a substrate to be processed by using a reaction between the radicals passing through the perforated holes and the second gas supplied through the second inlet.   
   
   
       27 . (canceled) 
   
   
       28 . A remote plasma apparatus as claimed in  claim 26 , wherein:
 the plate comprises, to define a gas supplier plenum, a top portion having a plurality of upper holes, a bottom portion having a plurality of lower holes, a plurality of tube walls connecting between the upper holes and the lower holes, respectively, and a plurality of gas injection holes communicating with the processing region;   the tube walls form the perforated holes and separate the gas supplier plenum from insides of the perforated holes, respectively; and   the second inlet is connected to the gas supplier plenum so as to communicate with the processing region through the gas supplier plenum and the gas injection holes.   
   
   
       29 - 34 . (canceled) 
   
   
       35 . A remote plasma apparatus comprising:
 a body defining a cavity and having first and second inlets, the cavity comprising a plasma generation region and a processing region, the first inlet communicating with the plasma generation region to introduce a first gas into the plasma generation region, the second inlet communicating with the processing region to supply a second gas into the processing region;   an energy source arranged and adapted to apply energy within the plasma generation region to generate, from the first gas, plasma including radicals;   a plate arranged between the plasma generation region and the processing region, the plate being formed with a plurality of perforated holes which the radicals pass through, wherein aperture ratio of the perforated holes to the plate is not greater than five percent and wherein neighboring ones of the perforated holes have a predetermined interval therebetween; and   a substrate supporter arranged within the processing region and adapted to support a substrate to be processed by using a reaction between the radicals passing through the perforated holes and the second gas supplied through the second inlet, so that the predetermined interval is shorter than another interval between the plate and the substrate to be processed when the substrate is supported by the substrate supporter.   
   
   
       36 . (canceled) 
   
   
       37 . A remote plasma apparatus as claimed in  claim 35 , wherein:
 the plate comprises, to define a gas supplier plenum, a top portion having a plurality of upper holes, a bottom portion having a plurality of lower holes, a plurality of tube walls connecting between the upper holes and the lower holes, respectively, and a plurality of gas injection holes communicating with the processing region;   the tube walls form the perforated holes and separate the gas supplier plenum from insides of the perforated holes, respectively; and   the second inlet is connected to the gas supplier plenum so as to communicate with the processing region through the gas supplier plenum and the gas injection holes.   
   
   
       38 . A remote plasma apparatus comprising:
 a body defining a cavity and having first and second inlets and an inner side wall, the cavity comprising a plasma generation region and a processing region, the first inlet communicating with the plasma generation region to introduce a first gas into the plasma generation region, the second inlet communicating with the processing region to supply a second gas into the processing region;   an energy source arranged and adapted to apply energy within the plasma generation region to generate, from the first gas, plasma including radicals;   a plate arranged between the plasma generation region and the processing region with no gap left between the plate and the inner side wall, the plate being formed with a plurality of perforated holes which the radicals pass through, wherein aperture ratio of the perforated holes to the plate is not greater than five percent and wherein neighboring ones of the perforated holes have a predetermined interval therebetween; and   a substrate supporter arranged within the processing region and adapted to support a substrate to be processed by using a reaction between the radicals passing through the perforated holes and the second gas supplied through the second inlet, so that the predetermined interval is shorter than another interval between the plate and the substrate to be   
   
   
       39 . (canceled) 
   
   
       40 . A remote plasma apparatus as claimed in  claim 38 , wherein:
 the plate comprises, to define a gas supplier plenum, a top portion having a plurality of upper holes, a bottom portion having a plurality of lower holes, a plurality of tube walls connecting between the upper holes and the lower holes, respectively, and a plurality of gas injection holes communicating with the processing region;   the tube walls form the perforated holes and separate the gas supplier plenum from insides of the perforated holes, respectively; and   the second inlet is connected to the gas supplier plenum so as to communicate with the processing region through the gas supplier plenum and the gas injection holes.   
   
   
       41 - 51 . (canceled)