Exposure data generation method and device, exposure data verification method and device and storage medium

Abstract

Exposure verification is applied to exposure data indicating a pattern to be exposed by a charged particle beam. If an error point is extracted from the exposure data by the exposure verification, the values of coefficients are modified and exposure data is regenerated taking into consideration the coefficients whose values have been modified. Thus, exposure data is re-generated by changing each of the coefficient values within its appropriate range.

1 - 6 . (canceled) 
     
     
         7 . An exposure data generation method for generating exposure data for exposing a resist film formed on a multi-layered semiconductor substrate by a charged particle beam, comprising:
 calculating a plurality of amounts of exposure obtained on the resist film taking into consideration an error caused in dimensions of a pattern formed on a layer constituting the semiconductor substrate; and   extracting a point to be inappropriate from the exposure data, based on the plurality of calculated amounts of exposure.   
     
     
         8 - 9 . (canceled) 
     
     
         10 . An exposure data verification device for verifying exposure data for exposing a resist film formed on a multi-layered semiconductor substrate by a charged particle beam, comprising:
 calculation unit for calculating a plurality of amounts of exposure obtained on the resist film taking into consideration an error caused in dimensions of a pattern formed on a layer constituting the semiconductor substrate; and   exposure verification unit for performing exposure verification for extracting a point to be inappropriate from the exposure data, based on the plurality of calculated amounts of exposure by the calculation unit.   
     
     
         11 - 12 . (canceled) 
     
     
         13 . A computer-readable storage medium on which is recorded a program for enabling a computer to perform functions, the functions comprising:
 calculation function for calculating a plurality of amounts of exposure obtained on the resist film taking into consideration an error caused in dimensions of a pattern formed on a layer constituting the semiconductor substrate; and   exposure verification function for performing exposure verification for extracting a point to be inappropriate from the exposure data, based on the plurality of calculated amounts of exposure by the calculation function.