Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device

Abstract

A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized.

1 . A method of manufacturing a device, comprising the steps of:
 providing a substrate in a film formation chamber;   forming a film comprising an organic material over the substrate by vapor deposition in the film formation chamber wherein the organic material is simultaneously deposited on an adhesion preventing shield;   removing the substrate from the film formation chamber after forming the film;   heating the adhesion preventing shield with a radiation heat after removing the substrate; and   exhausting the sublimated organic material,   wherein the adhesion preventing shield is covered by a reflective plate.   
   
   
       2 . The method of manufacturing a device according to  claim 1 , wherein a pressure inside the film formation chamber is lower than a pressure outside the film formation chamber during the steps of forming the film, removing the substrate, and heating the adhesion preventing shield. 
   
   
       3 . The method of manufacturing a device according to  claim 1 , wherein further comprising a step of supplying a halogen containing gas into the film formation chamber during heating the adhesion preventing shield. 
   
   
       4 . A method of manufacturing a device, comprising the steps of:
 providing a substrate in a film formation chamber;   forming a film comprising an organic material over the substrate by vapor deposition in the film formation chamber wherein the organic material is simultaneously deposited on an adhesion preventing shield;   removing the substrate from the film formation chamber after forming the film;   heating the adhesion preventing shield with a radiation heat after removing the substrate; and   exhausting the sublimated organic material,   wherein the adhesion preventing shield is covered by a reflective plate, and   wherein a plasma is formed during the exhausting of the sublimated organic material.   
   
   
       5 . The method of manufacturing a device according to  claim 4 , wherein a pressure inside the film formation chamber is lower than a pressure outside the film formation chamber during the steps of forming the film, removing the substrate, and heating the adhesion preventing shield. 
   
   
       6 . The method of manufacturing a device according to  claim 4 , wherein further comprising a step of supplying a halogen containing gas into the film formation chamber during heating the adhesion preventing shield. 
   
   
       7 . The method of manufacturing a device according to  claim 4 , wherein the plasma is an oxygen plasma. 
   
   
       8 . A method of manufacturing a device, comprising the steps of:
 providing a substrate in a film formation chamber;   forming a film comprising an organic material over the substrate by vapor deposition in the film formation chamber wherein the organic material is simultaneously deposited on an adhesion preventing shield;   removing the substrate from the film formation chamber after forming the film;   heating the adhesion preventing shield with a radiation heat after removing the substrate; and   exhausting the sublimated organic material,   wherein the adhesion preventing shield is covered by a reflective plate, and   wherein a conductor for heating the adhesion preventing shield is provided on the adhesion preventing shield.   
   
   
       9 . The method of manufacturing a device according to  claim 8 , wherein a pressure inside the film formation chamber is lower than a pressure outside the film formation chamber during the steps of forming the film, removing the substrate, and heating the adhesion preventing shield. 
   
   
       10 . The method of manufacturing a device according to  claim 8 , wherein further comprising a step of supplying a halogen containing gas into the film formation chamber during heating the adhesion preventing shield. 
   
   
       11 . A method of manufacturing a device, comprising the steps of:
 providing a substrate in a film formation chamber;   forming a film comprising an organic material over the substrate by vapor deposition in the film formation chamber wherein the organic material is simultaneously deposited on an adhesion preventing shield;   removing the substrate from the film formation chamber after forming the film;   heating the adhesion preventing shield with a radiation heat after removing the substrate; and   exhausting the sublimated organic material,   wherein the adhesion preventing shield is covered by a reflective plate,   wherein a plasma is formed during the exhausting of the sublimated organic material, and   wherein a conductor for heating the adhesion preventing shield is provided on the adhesion preventing shield.   
   
   
       12 . The method of manufacturing a device according to  claim 11 , wherein a pressure inside the film formation chamber is lower than a pressure outside the film formation chamber during the steps of forming the film, removing the substrate, and heating the adhesion preventing shield. 
   
   
       13 . The method of manufacturing a device according to  claim 11 , wherein further comprising a step of supplying a halogen containing gas into the film formation chamber during heating the adhesion preventing shield. 
   
   
       14 . The method of manufacturing a device according to  claim 11 , wherein the plasma is an oxygen plasma.