Semiconductor device

Abstract

The present invention aims at providing an integrated circuit device which can perform on-chip tracing by using a system installed with the same chip as that of a mass produced product, and comprises: at least one or more kinds of first chips equipped with a circuit for performing data processing; and a second chip equipped with a circuit for tracing the operation of said circuit installed a the first chip, wherein a signal between said first chip and said second chip is transmitted by signal transmission utilizing electromagnetic induction.

1 - 15 . (canceled) 
   
   
       16 . A semiconductor device, characterized by comprising:
 at least one or more kinds of first chips equipped with a circuit for performing data processing; and   a second chip equipped with a circuit for tracing the operation of said circuit equipped in the first chip, wherein   a signal between said first chip and said second chip is transmitted by signal transmission utilizing electromagnetic induction.   
   
   
       17 . A semiconductor device, characterized by comprising:
 at least one or more kinds of first chips;   at least one or more third chips equipped with a storage circuit in which data to be used by the first chip is stored; and   a second chip equipped with a circuit for tracing the operation of said circuit installed in the first chip and for tracing a signal between said first chip and said third chip, wherein   a signal between said first chip and said second chip is transmitted by signal transmission utilizing electromagnetic induction.   
   
   
       18 . The semiconductor device according to  claim 16 , characterized in that
 a loop is formed of a part of a wiring through which a signal of said first chip to be monitored by said second chip flows, and an inductor is formed at a position corresponding to said loop of said second chip.   
   
   
       19 . The semiconductor device according to  claim 17 , characterized in that
 a loop is formed of a part of a wiring through which a signal of said first chip to be monitored by said second chip flows, and an inductor is formed at a position corresponding to said loop of said second chip.   
   
   
       20 . The semiconductor device according to  claim 16 , characterized in that
 power supply to said second chip is provided without power passing through said first chip or said second chip, or both of them.   
   
   
       21 . The semiconductor device according to  claim 17 , characterized in that
 power supply to said second chip is provided without power passing through said first chip or said second chip, or both of them.   
   
   
       22 . The semiconductor device according to  claim 16 , characterized in that
 said second chip is sealed in a separate package different from a package in which said first chip or said third chip is sealed, or different from a package in which both said first chip and said third chip are sealed.   
   
   
       23 . The semiconductor device according to  claim 17 , characterized in that
 said second chip is sealed in a separate package different from a package in which said first chip or said third chip is sealed, or different from a package in which both said first chip and said third chip are sealed.   
   
   
       24 . The semiconductor device according to  claim 16 , characterized in that
 signal transmission between chips is performed by an electric transmission path penetrating a chip substrate.   
   
   
       25 . The semiconductor device according to  claim 17 , characterized in that
 signal transmission between chips is performed by an electric transmission path penetrating a chip substrate.   
   
   
       26 . The semiconductor device according to  claim 16 , characterized in that
 signal transmission between chips is performed by signal transmission utilizing a capacitive couple between electrodes formed between the chips.   
   
   
       27 . The semiconductor device according to  claim 17 , characterized in that
 signal transmission between chips is performed by signal transmission utilizing a capacitive couple between electrodes formed between the chips.   
   
   
       28 . A semiconductor device, including
 at least one or more first circuits for transmitting data;   at least one or more second circuits for receiving said data; and   first signal transmission means for performing signal transmission from said first circuit to said second circuit,   said semiconductor device characterized by comprising   at least one or more third circuits for performing signal transmission by electromagnetic induction through said first signal transmission means.   
   
   
       29 . The semiconductor device according to  claim 28 , characterized in that
 said first circuit and the second circuit are included in a same first chip, and said third chip is included in a second chip.   
   
   
       30 . The semiconductor device according to  claim 28 , characterized in that
 said first circuit is included in a first chip, said second chip is included in a third chip, and said third chip is included in a second chip.   
   
   
       31 . The semiconductor device according to  claim 28 , characterized in that
 said third circuit has second signal transmission means, and said first and second signal transmission means are electromagnetic induction coils arranged one on top of another.   
   
   
       32 . The semiconductor device according to  claim 29 , characterized in that
 said third circuit has second signal transmission means, and said first and second signal transmission means are electromagnetic induction coils arranged one on top of another.   
   
   
       33 . The semiconductor device according to  claim 30 , characterized in that
 said third circuit has second signal transmission means, and said first and second signal transmission means are electromagnetic induction coils arranged one on top of another.