Polishing apparatus and polishing method

Abstract

A polishing apparatus polishing a surface of a substrate, such as a semiconductor substrate. The polishing apparatus including a substrate holding mechanism, a polishing table having a polishing surface, and a polishing surface temperature controller for controlling a temperature distribution of the polishing surface. The substrate holding mechanism and the polishing table provide relative movement between the surface of the substrate and the polishing surface while the substrate holding mechanism presses the surface of the substrate against the polishing surface to thereby polish the surface of the substrate. The polishing surface temperature controller controls the temperature distribution so that the polishing surface has a predetermined temperature distribution to thereby control removal rates of portions of the surface of the substrate.

1 - 14 . (canceled) 
   
   
       15 . A method of polishing a substrate whose characteristic is such that a removal rate thereof increases as a polishing temperature decreases, said method comprising:
 performing a first polishing process of polishing a surface of the substrate by providing sliding contact between the surface of the substrate and a polishing surface while supplying a polishing liquid onto the polishing surface;   during said first polishing process, ejecting a fluid to the polishing surface to cool the polishing surface; and   performing a second polishing process of polishing the surface of the substrate by providing sliding contact between the surface of the substrate and the polishing surface while supplying the polishing liquid onto the polishing surface, said second polishing process being performed without ejecting the fluid to the polishing surface so as to maintain a temperature of the polishing surface higher than that during said first polishing process.   
   
   
       16 . The method according to  claim 15 , wherein said fluid is a gas. 
   
   
       17 . The method according to  claim 15 , wherein said fluid is a mixture of a gas and a liquid. 
   
   
       18 . A method of polishing a substrate whose characteristic is such that a removal rate thereof increases as a polishing temperature decreases, said method comprising:
 performing a first polishing process of polishing a surface of the substrate by providing sliding contact between the surface of the substrate and a polishing surface while supplying a polishing liquid onto the polishing surface;   during said first polishing process, ejecting a fluid to the polishing surface at a first flow rate to cool the polishing surface;   performing a second polishing process of polishing the surface of the substrate by providing sliding contact between the surface of the substrate and the polishing surface while supplying the polishing liquid onto the polishing surface; and   during said second polishing process, ejecting the fluid to the polishing surface at a second flow rate that is lower than the first flow rate so as to maintain a temperature of the polishing surface higher than that during said first polishing process.   
   
   
       19 . The method according to  claim 18 , wherein said fluid is a gas. 
   
   
       20 . The method according to  claim 18 , wherein said fluid is a mixture of a gas and a liquid.