Thermal treatment apparatus, method for manufacturing semiconductor device, and method for manufacturing substrate

Abstract

A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.

1 . A supporting portion for supporting a substrate for heat-treating the substrate, wherein the supporting portion is formed from a silicon plate-like-member, a thickness of the supporting portion is not less than 3 mm and not more thank 10 mm, and the supporting portion is not in contact with a periphery of the substrate. 
   
   
       2 . The supporting portion for according to  claim 1 , wherein a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with an amorphous silicon oxide film. 
   
   
       3 . A supporting portion for supporting a substrate for heat-treating the substrate, wherein the supporting portion is formed from a silicon plate-like-member, a thickness of the supporting portion is not less than 3 mm and not more thank 10 mm, the supporting portion is not in contact with a periphery of the substrate, and a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with a film or films comprising one or more materials including silicon carbide, silicon nitride, polycrystalline silicon, silicon oxide, glassy carbon, and microcrystalline diamond. 
   
   
       4 . The supporting portion according to  claim 3 , wherein an uppermost film of the film or the films is an amorphous silicon oxide film. 
   
   
       5 . A substrate support for supporting a substrate for heat-treating the substrate, wherein the substrate support has a main body portion and a supporting portion provided on the main body portion, the supporting portion being in contact with the substrate, the supporting portion is formed from a silicon plate-like member, a thickness of the supporting portion is not less than 3 mm and not more than 10 mm, and the supporting portion is not in contact with a periphery of the substrate. 
   
   
       6 . The substrate support according to  claim 5 , wherein a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with an amorphous silicon oxide film. 
   
   
       7 . The substrate support according to  claim 5 , wherein the main body portion is formed from a silicon carbide. 
   
   
       8 . The substrate support according to  claim 6 , wherein the main body portion is formed from a silicon carbide. 
   
   
       9 . A substrate support for supporting a substrate for heat-treating the substrate, wherein the substrate support has a main body portion and a supporting portion provided on the main body portion, the supporting portion being in contact with the substrate, the supporting portion is formed from a silicon plate-like member, a thickness of the supporting portion is not less than 3 mm and not more than 10 mm, and the supporting portion is not in contact with a periphery of the substrate, and a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with a film or films comprising one or more materials including silicon carbide, silicon nitride, polycrystalline silicon, silicon oxide, glassy carbon, and microcrystalline diamond. 
   
   
       10 . The substrate support according to  claim 9 , wherein an uppermost film of the film or the films is an amorphous silicon oxide film. 
   
   
       11 . The substrate support according to  claim 9 , wherein the main body portion is formed from a silicon carbide. 
   
   
       12 . The substrate support according to  claim 10 , wherein the main body portion is formed from a silicon carbide. 
   
   
       13 . A substrate support for supporting a substrate for heat-treating the substrate, wherein the substrate support has a supporting portion that is in contact with the substrate and a plate that supports the supporting portion and a main body portion which supports the plate, the supporting portion is formed from a silicon plate-like member and a thickness of the supporting portion is not less than 3 mm and not more than 10 mm, and a diameter of the supporting portion is smaller than a diameter of the substrate and a diameter of the plate. 
   
   
       14 . The substrate support according to  claim 13 , wherein a substrate-placing face of the supporting portion, on which the substrate is placed, is coated with an amorphous silicon oxide film. 
   
   
       15 . The substrate support according to  claim 13 , wherein the plate and the main body portion are formed from a silicon carbide. 
   
   
       16 . The substrate support according to  claim 14 , wherein the plate and the main body portion are formed from a silicon carbide.