Through-silicon via and method for forming the same

Abstract

A method for forming a through-silicon via includes the steps of defining a groove in each chip of a wafer which has a plurality of semiconductor chips; applying liquid polymer on the wafer to fill the groove; forming an insulation layer on a sidewall of the groove through patterning the polymer; forming a metal layer to fill the groove which is formed with the insulation layer on the sidewall thereof; and back-grinding a backside of the wafer to expose the metal layer filled in the groove.

1 . A semiconductor wafer having a through-silicon via, said semiconductor wafer comprising: a groove formed into a wafer; an insulation layer formed on a surface of the groove;
 and a metal filled in the groove, wherein the insulation layer is comprised of a mechanically compliant polymer.