Semiconductor device and method for fabricating the same

Abstract

A semiconductor device comprises an active region including a first active area to be a source/drain and a second active area to be a gate, and a device isolation region defining the active region. The first active area is obtained by growing a semiconductor substrate located between the gates as a seed layer, and formed to have a larger line-width than that of the second active area in a longitudinal direction of the gate.

1 . A semiconductor device comprising:
 an active region including a source/drain and a gate; and   a device isolation region defining the active region,   wherein the gate is formed as a portion of a fin gate, and the source/drain is an epitaxial layer formed between the neighboring gates as a seed layer,   wherein in a longitudinal direction of the gate, a line width of the source/drain is greater than the width of the gate.   
   
   
       2 . The semiconductor device of  claim 1 , wherein in a longitudinal direction of the gate, the line width of the source/drain is F, and the line width of the gate region is G, where 7F/20<G<19F/20.