US2010144082A1PendingUtilityA1

Radiation detecting apparatus, scintillator panel, radiation detecting system, and method for producing scintillator layer

Assignee: CANON KKPriority: Mar 2, 2006Filed: Feb 17, 2010Published: Jun 10, 2010
Est. expiryMar 2, 2026(expired)· nominal 20-yr term from priority
Inventors:Masato Inoue
G01T 1/20189A61B 6/4258
48
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A radiation detecting apparatus includes: a sensor panel that has a substrate, and has a plurality of pixels each of which has a photoelectric conversion element for converting light into an electric signal, arranged on the substrate; and a scintillator layer arranged on a reverse side of the pixels with respect to the substrate, wherein the scintillator layer contains an activator added in a main ingredient, and has a higher concentration of the activator in a peripheral area than in a center area, in a surface direction of the scintillator layer.

Claims

exact text as granted — not AI-modified
1 . A manufacturing method of a radiation detecting apparatus including steps of:
 placing a substrate having a photoelectric conversion element at a substrate holder; and   forming a scintillator layer, on the substrate, from a main ingredient evaporated from a main ingredient evaporation boat placed at a first side of the substrate, and from an activator evaporated from an activator evaporation boat placed, at the first side of the substrate, at a position apart from a center axis of the substrate, such that the scintillator layer contains the activator in a higher concentration in a peripheral area rather than the concentration in a center area.   
   
   
       2 . The manufacturing method of a radiation detecting apparatus according to  claim 1 , further comprising a step of arranging a metal layer covering the scintillator layer. 
   
   
       3 . The manufacturing method of a radiation detecting apparatus according to  claim 1 , wherein the concentration of the activator in the peripheral area of the scintillator layer is 1.0 mol % or more with respect to the concentration of main ingredient, and the concentration of the activator in a central part of the scintillator layer is 0.5 mol % or more but 1.5 mol % or less with respect to the concentration of main ingredient. 
   
   
       4 . The manufacturing method of a radiation detecting apparatus according to  claim 1 , wherein the scintillator layer is made of a columnar crystal structure. 
   
   
       5 . The manufacturing method of a radiation detecting apparatus according to  claim 1 , further comprising a step of annealing the scintillator layer such that an annealing temperature of the center area is higher than an annealing temperature of the peripheral area. 
   
   
       6 . The manufacturing method of a scintillator panel according to  claim 2 , further comprising a step of arranging a light transmitting resin layer covering the scintillator layer. 
   
   
       7 . A manufacturing method of a scintillator panel including steps of:
 placing a base plate at a holder; and   forming a scintillator layer, on the substrate, from a main ingredient evaporated from a main ingredient evaporation boat placed at a first side of the base plate, and from and an activator evaporated from an activator evaporation boat placed, at the first side of the base plate, at a position apart from a center axis of the base plate, such that the scintillator layer contains the activator in a higher concentration in a peripheral area rather than the concentration in a center area.   
   
   
       8 . The manufacturing method of a scintillator panel according to  claim 7 , wherein the concentration of the activator in the peripheral area of the scintillator layer is 1.0 mol % or more with respect to the concentration of main ingredient, and the concentration of the activator in a central part of the scintillator layer is 0.5 mol % or more but 1.5 mol % or less with respect to the concentration of main ingredient. 
   
   
       9 . The manufacturing method of a scintillator panel according to  claim 7 , wherein the scintillator layer is made of a columnar crystal structure. 
   
   
       10 . The manufacturing method of a scintillator panel according to  claim 7 , further comprising a step of annealing the scintillator layer such that an annealing temperature of the center area is higher than an annealing temperature of the peripheral area. 
   
   
       11 . A manufacturing method of a radiation detecting apparatus including:
 a step of preparing a substrate having a photoelectric conversion element;   a step of preparing a scintillator panel according to  claim 7 ; and   a step of bonding together the substrate and the scintillator panel.

Join the waitlist — get patent alerts

Track US2010144082A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.