Catalyst support substrate, method for growing carbon nanotubes using the same, and transistor using carbon nanotubes

Abstract

A catalyst supporting substrate includes a first region ( 54 ) which is formed on a substrate ( 50 ); and a second region ( 55 ) which is formed covering a part of the first region. The first region ( 54 ) includes a catalyst supporting portion ( 54 a ) containing a first material. The second region ( 55 ) includes a catalyst portion ( 55 ) containing a second material which is different from the first material. The first material includes a metal containing at least one of elements selected from the second group to the fourteenth group of the periodic table or a compound thereof. The second material is a catalyst which grows carbon nanotubes in a vapor phase.

1 . A transistor comprising:
 a catalyst containing film which is placed on a substrate and grows carbon nanotubes in a vapor phase;   said carbon nanotubes which are extended in the direction along a surface of said substrate from said catalyst containing film;   a first electrode which is connected to a part of said catalyst containing film side of said carbon nanotubes;   a second electrode which is connected to a part of another side of said carbon nanotubes; and   a gate electrode which applies a voltage to said carbon nanotubes between said first electrode and said second electrode,   wherein said catalyst containing film includes:   
       a first region which is formed on a substrate;
 said first region including a catalyst supporting portion containing a first material, 
 said first material including a metal containing at least one of elements selected from the second group to the fourteenth group of the periodic table or a compound thereof, an upper portion of the first region being oxidized or hydroxylated to form the catalyst supporting portion, and 
 a second region which is formed covering a part of said first region; 
 said second region including a catalyst portion containing a second material which is different from said first material, 
 said second material is a catalyst which grows carbon nanotubes in a vapor phase. 
 
     
     
         2 . The transistor according to  claim 1 , wherein said carbon nanotubes include single-wall carbon nanotubes. 
     
     
         3 . The transistor according to  claim 1 , wherein said gate electrode is placed on an upper portion of the carbon nanotubes. 
     
     
         4 . The transistor according to  claim 1 , wherein said gate electrode is placed on a rear surface of said substrate. 
     
     
         5 . The transistor according to  claim 1 , wherein said second electrode is formed so as to be separated from said first electrode and surround a periphery of said first electrode. 
     
     
         6 . The transistor according to  claim 1 , wherein said second material includes a metal containing at least one of elements selected from a group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, La, Y, Mo and Mn or a compound thereof. 
     
     
         7 . The transistor according to  claim 6 , wherein said first material includes a metal containing at least one of elements selected from a group consisting of Al, Mo, Ti, Ta, Cr, Cu, Mn, Mg, Zr, Hf, W, Ru, Rh, Zn and Sn or a compound thereof. 
     
     
         8 . The transistor according to  claim 1 , wherein said first region includes a metal film which contains said first material and is formed on said substrate, and
 said catalyst supporting portion includes a film that an upper portion of said metal film is oxidized or hydroxylated.   
     
     
         9 . The transistor according to  claim 8 , wherein said second material includes a metal containing at least one of elements selected from a group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, La, Y, Mo and Mn or a compound thereof. 
     
     
         10 . The transistor according to  claim 9 , wherein said first material includes a metal containing at least one of elements selected from a group consisting of Al, Mo, Ti, Ta, Cr, Cu, Mn, Mg, Zr, Hf, W, Ru, Rh, Zn and Sn or a compound thereof.