Substrate treatment apparatus

Abstract

A substrate treatment apparatus includes a chamber providing a reaction region and including first and second sides facing each other, a module connected to the first side, an upper electrode in the reaction region, a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side, and a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point.

1 . A substrate treatment apparatus, comprising:
 a chamber providing a reaction region and including first and second sides facing each other;   a module connected to the first side;   an upper electrode in the reaction region;   a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side; and   a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point.   
   
   
       2 . The apparatus according to  claim 1 , wherein a substrate entrance for carrying the substrate into and out of the chamber is set up at the first side, and a slot valve is set up between the module and the substrate entrance. 
   
   
       3 . The apparatus according to  claim 1 , wherein the substrate is a rectangle having a length and a width shorter than the length, and the distance between the first point and the second point is within a range of 2% to 5% of the length of the substrate. 
   
   
       4 . The apparatus according to  claim 1 , wherein the substrate is a rectangle having a length and a width shorter than the length, and the distance between the first point and the second point is within a range of 2.5% to 4% of the length of the substrate. 
   
   
       5 . The apparatus according to  claim 1 , wherein the substrate is a rectangle having a length and a width shorter than the length, and the substrate is asymmetric with respect to a first line passing through the second point and perpendicular to a length direction and symmetric with respect to a second line passing through the second point and parallel to the length direction. 
   
   
       6 . The apparatus according to  claim 1 , wherein a gas supply line is connected to the upper electrode corresponding to the first point. 
   
   
       7 . A substrate treatment apparatus, comprising:
 a chamber providing a reaction region and including first and second sides facing each other;   a module connected to the first side;   an upper electrode in the reaction region;   a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side; and   first and second feeding lines for applying an RF power, the first and second feeding lines connected to the upper electrode corresponding to the first and second points, respectively.   
   
   
       8 . The apparatus according to  claim 7 , wherein a substrate entrance for carrying the substrate into and out of the chamber is set up at the first side, and a slot valve is set up between the module and the substrate entrance. 
   
   
       9 . The apparatus according to  claim 8 , wherein the module includes a transfer chamber or a load lock chamber for supplying the substrate to the chamber or carrying the substrate out of the chamber. 
   
   
       10 . The apparatus according to  claim 7 , wherein the substrate is a rectangle having a length and a width shorter than the length, and the distance between the first point and the second point is within a range of 10% to 30% of the length of the substrate. 
   
   
       11 . The apparatus according to  claim 7 , wherein the substrate is a rectangle having a length and a width shorter than the length, and the distance between the first point and the second point is within a range of 15% to 25% of the length of the substrate. 
   
   
       12 . The apparatus according to  claim 7 , wherein the substrate is a rectangle having a length and a width shorter than the length, and the substrate is asymmetric with respect to a first line passing through the second point and perpendicular to a length direction and symmetric with respect to a second line passing through the second point and parallel to the length direction. 
   
   
       13 . A substrate treatment apparatus, comprising:
 a chamber providing a reaction region and including first and second sides facing each other;   an upper electrode in the reaction region;   a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and the substrate is a rectangle having a length and a width shorter than the length, wherein first and second points are defined on the substrate, the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side by 2% to 5% of the length of the substrate; and   a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point.   
   
   
       14 . The apparatus according to  claim 13 , wherein a substrate entrance for carrying the substrate into and out of the chamber is set up at the first side, a slot valve is connected to the substrate entrance, and a module for transferring the substrate into the reaction region is connected to the slot valve. 
   
   
       15 . The apparatus according to  claim 13 , wherein the substrate is asymmetric with respect to a first line passing through the second point and perpendicular to a length direction and symmetric with respect to a second line passing through the second point and parallel to the length direction. 
   
   
       16 . The apparatus according to  claim 13 , wherein a gas supply line is connected to the upper electrode corresponding to the first point. 
   
   
       17 . A substrate treatment apparatus, comprising:
 a chamber providing a reaction region and including first and second sides facing each other;   an upper electrode in the reaction region;   a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and the substrate is a rectangle having a length and a width shorter than the length, wherein first and second points are defined on the substrate, the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side by 10% to 30% of the length of the substrate; and   first and second feeding lines for applying an RF power, the first and second feeding lines connected to the upper electrode corresponding to the first and second points, respectively.   
   
   
       18 . The apparatus according to  claim 17 , wherein a substrate entrance for carrying the substrate into and out of the chamber is set up at the first side, a slot valve is connected to the substrate entrance, and a module for transferring the substrate is connected to the slot valve. 
   
   
       19 . The apparatus according to  claim 18 , wherein the module includes a transfer chamber or a load lock chamber for supplying the substrate to the chamber or carrying the substrate out of the chamber. 
   
   
       20 . The apparatus according to  claim 17 , wherein the substrate is asymmetric with respect to a first line passing through the second point and perpendicular to a length direction and symmetric with respect to a second line passing through the second point and parallel to the length direction.