Methods and compositions for dielectric materials

Abstract

The present invention comprises methods and compositions of dielectric materials. The dielectric materials of the present invention comprise materials having a dielectric constant of more than 1.0 and less than 1.9 and/or a dissipation factor of less than 0.0009. Other characteristics include the ability to withstand a wide range of temperatures, from both high temperatures of approximately +260° C. to low temperatures of approximately −200° C., operate in wide range of atmospheric conditions and pressures (e.g., a high atmosphere, low vacuum condition such as that found in the outer-space as well as conditions similar to those found at sea level or below sea level). The dielectric materials of the present invention may be used in the manufacture of composite structures that can be used alone or in combination with other materials, and can be used in electronic components or devices such as RF interconnects.

1 . A method of making an assembly comprising:
 contacting a dielectric material layer with an electrically conductive layer,   wherein the dielectric material layer comprises a poly(tetrafluoroethylene) material molded from sintered poly(tetrafluoroethylene) resin, and has a dielectric constant of more than about 1.0 and less than about 1.9 and a loss tangent of less than about 0.0009.   
     
     
         2 . The method of  claim 1 , further comprising molding the dielectric material layer prior to contacting with the electrically conductive layer. 
     
     
         3 . The method of  claim 1 , further comprising skiving the sintered poly(tetrafluoroethylene) dielectric material prior to contacting with the electrically conductive layer. 
     
     
         4 . The method of  claim 1 , wherein the dielectric material layer further comprises a filler. 
     
     
         5 . The method of  claim 4 , wherein the filler comprises glass fibers, glass spheres, carbon, graphite, bronze, stainless steel, polymeric fillers, molybdenum disulfide, or a combination comprising at least one of the foregoing. 
     
     
         6 . The method of  claim 1 , wherein the dielectric material layer is resistant to exposure to acidic aqueous media, basic aqueous media, or organic media. 
     
     
         7 . The method of  claim 1 , wherein the dielectric material layer ranges in thickness from about 0.00001 mm to 100 mm. 
     
     
         8 . The method of  claim 1 , wherein the dielectric material layer has a void volume from about 10% to 75%. 
     
     
         9 . The method of  claim 1 , wherein the sintered poly(tetrafluoroethylene) resin is micron sized. 
     
     
         10 . The method of  claim 1 , further comprising disposing an additional layer on the dielectric material layer. 
     
     
         11 . The method of  claim 10 , wherein the additional layer is a polymeric membrane. 
     
     
         12 . The method of  claim 11 , wherein the polymeric membrane is perfluoroalkoxy, ethylene chlorotrifluoroethylene, or fluoroethylene propylene. 
     
     
         13 . The method of  claim 1 , wherein the electrically conductive layer comprises copper, nickel, an alloy of copper or nickel, plated copper or nickel, rolled copper-invar-copper, aluminum, brass or a combination comprising at least one of the foregoing metals. 
     
     
         14 . The method of  claim 1 , further comprising disposing an additional conductive layer on the dielectric material layer. 
     
     
         15 . The method of  claim 1 , wherein after combining the dielectric material layer with the electrically conductive layer, a portion of the electrically conductive layer is removed. 
     
     
         16 . The method of  claim 15 , wherein the portion of the electrically conductive layer is removed by etching. 
     
     
         17 . The method of  claim 1 , wherein a through hole is drilled through the assembly, or is partially drilled through, or is pre-drilled prior to combining the dielectric material layer with the electrically conductive layer. 
     
     
         18 . The method of  claim 17 , wherein the through hole selectively connects the electrically conductive layer. 
     
     
         19 . The method of  claim 17 , wherein the through hole is plated with a conductor. 
     
     
         20 . The method of  claim 19 , further comprising stacking two or more of the assemblies to produce a multilayer assembly. 
     
     
         21 . The method of  claim 20 , wherein the multilayer assembly is interconnected by one or more through holes. 
     
     
         22 . The method of  claim 1 , wherein the dielectric material layer and the electrically conductive layer are bonded together by an adhesive. 
     
     
         23 . The method of  claim 1 , wherein the assembly is a printed circuit board. 
     
     
         24 . The method of  claim 1 , wherein the assembly forms an electronic device, a circuit, a microstrip circuit, a multilayer circuit, a space saving circuitry, or a stripline circuit. 
     
     
         25 . The method of  claim 1 , wherein the assembly is used in a millimeter wave system, a radar system, a guidance system, an antenna, a cellular device, a cellular base station, a wireless device, a mobile communications system, a LAN system, an automotive electronic article, a satellite TV receiver, a computer, a telephone, a microwave, a microwave test equipment, a RF component, a RF interconnect, a power backplate, a collision avoidance system, a beam forming network, an identification system, a global positioning antenna, a global positioning receiver, a filter, a coupler, a low noise amplifier, a power divider, a combiner, a power amplifier, an automobile, a space craft, a marine craft, a medical equipment, a pipeline, a transmission device, or a monitoring device.