Capacitor device and method of manufacturing the same

Abstract

A method of manufacturing a capacitor device of the present invention, includes the steps of, forming an insulating layer on a substrate, forming a recess portion in the insulating layer by an imprinting process, forming a lower electrode by filling a metal layer in the recess portion in the insulating layer, forming a photosensitive dielectric layer on the lower electrode, forming an upper electrode on the dielectric layer, and forming a dielectric layer pattern under the upper electrode by exposing/developing the dielectric layer while using the upper electrode as a mask.

1 . A capacitor device comprising:
 a substrate;   an insulating layer formed on the substrate;   a recess portion formed in the insulating layer;   a lower electrode formed to be buried in the recess portion in the insulating layer;   a dielectric layer pattern formed on the lower electrode;   an upper electrode formed on the dielectric layer pattern.   
     
     
         2 . A capacitor device comprising:
 a substrate;   a lower electrode formed over the substrate;   an insulating layer formed on the lower electrode;   an opening portion formed in a portion of the insulating layer on the lower electrode;   a dielectric layer pattern formed to be buried in the opening portion of the insulating layer;   an upper electrode formed on the dielectric layer pattern.   
     
     
         3 . A capacitor device according to  claim 1 , wherein an upper surface of the lower electrode and an upper surface of the insulating layer constitute a coplanar surface. 
     
     
         4 . A capacitor device according to  claim 2 , wherein an upper surface of the dielectric layer pattern and an upper surface of the insulating layer constitute a coplanar surface.