Copper (i) compounds useful as deposition precursors of copper thin films

Abstract

Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

1 . A method of making a VLSI device, comprising forming a VLSI device structure requiring metallization, and metallizing the VLSI device structure with copper interconnect lines, wherein said metallizing comprises vapor deposition of copper, utilizing a copper precursor composition comprising a copper precursor of the formula: 
     
       
         
         
             
             
         
       
     
     wherein:
 R 1  and R 2  may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 6  alkyl, C 3 -C 7  cycloalkyl, aryl, and hydrocarbyl derivatives of silyl groups; 
 R 3  is selected from the group consisting of H, C 1 -C 6  alkyl, C 3 -C 7  cycloalkyl, aryl, hydrocarbyl derivatives of silyl groups and NR 4 R 5 , where R 4  and R 5  may be the same as or different from one another and is independently selected from the group consisting of H, C 1 -C 6  alkyl, C 3 -C 7  cycloalkyl, aryl, and hydrocarbyl derivatives of silyl groups. 
 
   
   
       2 . The method of  claim 1 , wherein said vapor deposition of copper comprises full fill copper metallization. 
   
   
       3 . The method of  claim 1 , wherein said vapor deposition of copper comprises chemical vapor deposition or atomic layer deposition. 
   
   
       4 . The method of  claim 1 , wherein said copper interconnect lines comprise a nanometer-scale linewidth. 
   
   
       5 . The method of  claim 4 , wherein said copper interconnect lines comprise a conformal vertical interconnect. 
   
   
       6 . The method of  claim 4 , wherein said copper interconnect lines comprise 65 nanometer linewidth copper metallization. 
   
   
       7 . The method of  claim 1 , wherein said copper precursor comprises copper (I) 2-isopropyl-1,3-diisopropylamidinate. 
   
   
       8 . The method of  claim 1 , wherein said copper precursor comprises copper (I) 2-dimethylamine-1,3-diisopropylamidinate. 
   
   
       9 . The method of  claim 1 , wherein said copper precursor composition comprises an adjuvant selected from among water, water-generating compounds and reducing agents. 
   
   
       10 . The method of  claim 1 , wherein said copper precursor composition comprises a solvent medium. 
   
   
       11 . The method of  claim 10 , wherein said solvent medium comprises an alkane solvent. 
   
   
       12 . The method of  claim 10 , wherein said solvent medium comprises an aryl solvent. 
   
   
       13 . The method of  claim 10 , wherein said solvent medium comprises a solvent selected from the group consisting of hexane, heptane, octane, pentane, benzene, toluene, amines and amides. 
   
   
       14 . The method of  claim 1 , wherein said VLSI device structure is selected from the group consisting of semiconductor integrated circuitry, thin-film circuitry, thin-film packaging components and thin-film recording head coils. 
   
   
       15 . The method of  claim 1 , wherein said VLSI device structure comprises dielectric and conductive layers formed on and/or within a substrate. 
   
   
       16 . The method of  claim 1 , wherein said vapor deposition of copper comprises depositing copper on a barrier layer of the VLSI device structure. 
   
   
       17 . The method of  claim 16 , wherein said barrier layer comprises TiN or TaN. 
   
   
       18 . A VLSI device, manufactured by a process including metallization of a VLSI device structure with copper interconnect lines by vapor deposition of copper, utilizing a copper precursor composition comprising a copper precursor of the formula: 
     
       
         
         
             
             
         
       
     
     wherein:
 R 1  and R 2  may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 6  alkyl, C 3 -C 7  cycloalkyl, aryl, and hydrocarbyl derivatives of silyl groups; 
 R 3  is selected from the group consisting of H, C 1 -C 6  alkyl, C 3 -C 7  cycloalkyl, aryl, hydrocarbyl derivatives of silyl groups and NR 4 R 5 , where R 4  and R 5  may be the same as or different from one another and is independently selected from the group consisting of H, C 1 -C 6  alkyl, C 3 -C 7  cycloalkyl, aryl, and hydrocarbyl derivatives of silyl groups. 
 
   
   
       19 . The VLSI device of  claim 18 , wherein said copper interconnect lines include conformal vertical interconnects with nanometer-scale linewidths. 
   
   
       20 . The VLSI device of  claim 19 , wherein said nanometer-scale linewidths comprise 65 nanometer linewidths.