Light emitting diode

Abstract

A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and at least one transparent conductive layer. The transparent conductive layer comprises of a carbon nanotube structure.

1 . A light emitting diode, comprising:
 a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and at least one transparent conductive layer, the transparent conductive layer comprises a carbon nanotube structure.   
     
     
         2 . The light emitting diode of  claim 1 , wherein the carbon nanotube structure is a free-standing structure. 
     
     
         3 . The light emitting diode of  claim 1 , wherein the transparent conductive layer comprises the carbon nanotube structure and a plurality of metal particles, the metal particles are dispersed in the carbon nanotube structure to form a composite layer. 
     
     
         4 . The light emitting diode of  claim 1 , wherein the carbon nanotube structure comprises a plurality of carbon nanotubes. 
     
     
         5 . The light emitting diode of  claim 1 , wherein the carbon nanotube structure comprises at least one carbon nanotube film, the carbon nanotube film comprises a plurality of carbon nanotubes joined by van der Waals force. 
     
     
         6 . The light emitting diode of  claim 1 , wherein the carbon nanotube structure comprises a drawn carbon nanotube film, the drawn carbon nanotube film comprises a plurality of carbon nanotubes approximately parallel to each other. 
     
     
         7 . The light emitting diode of  claim 6 , wherein the carbon nanotube structure comprises two drawn carbon nanotube films, an angle between aligned directions of the drawn carbon nanotube films is approximately 90 degrees. 
     
     
         8 . The light emitting diode of  claim 1 , wherein the carbon nanotube structure comprises a carbon nanotube film, the carbon nanotube film comprises a plurality of carbon nanotubes, the carbon nanotubes are entangled with one another. 
     
     
         9 . The light emitting diode of  claim 1 , wherein the carbon nanotube structure comprises a plurality of twisted carbon nanotube wires, each of the twisted carbon nanotube wires comprise a plurality of carbon nanotubes, the carbon nanotubes helically wrap around the longitudinal axis of the twisted carbon nanotube wires. 
     
     
         10 . The light emitting diode of  claim 1 , wherein the carbon nanotube structure comprises a plurality of untwisted carbon nanotube wires, each of the untwisted carbon nanotube wires comprise a plurality of carbon nanotubes, the carbon nanotubes are substantially parallel to each other and the longitudinal axis of the untwisted carbon nanotube wires. 
     
     
         11 . The light emitting diode of  claim 1 , further comprising a static electrode formed between the second semiconductor layer and the transparent conductive layer. 
     
     
         12 . The light emitting diode of  claim 1 , further comprising a buffer layer located between the substrate and the first semiconductor layer. 
     
     
         13 . The light emitting diode of  claim 1 , further comprising a reflecting layer located between the substrate and the first semiconductor layer. 
     
     
         14 . The light emitting diode of  claim 1 , further comprising a photon crystal structure located between the substrate and the first semiconductor layer. 
     
     
         15 . A light emitting diode comprising:
 a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first transparent conductive layer, and a second transparent conductive layer; the first semiconductor layer includes a first surface and a second surface; the active layer and the second semiconductor layer are formed on the first surface; the second transparent conductive layer is mounted on an top surface of the second semiconductor layer; and the first transparent conductive layer is mounted on the second surface of the first semiconductor layer; wherein each of the first and second transparent conductive layers comprise of a carbon nanotube structure.   
     
     
         16 . The light emitting diode of  claim 15 , wherein the first surface and the second surface of the first semiconductor layer are located on different planes and form a step-shaped structure. 
     
     
         17 . A light emitting diode comprising:
 a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a transparent conductive layer; the first semiconductor layer comprises a first surface and a second surface, and the first and second surface are located on same side of the first semiconductor layer; the active layer and the second semiconductor layer are disposed on the first surface; the transparent conductive layer is disposed on the second surface of the first semiconductor layer and electrically connected to the first semiconductor layer; and the transparent conductive layer comprises of a carbon nanotube structure.   
     
     
         18 . The light emitting diode of  claim 17 , further comprising a first electrode and a second electrode, the first electrode is disposed on a top surface of the transparent conductive layer, and the second electrode is disposed on the second semiconductor layer.