Semiconductor diode

Abstract

A semiconductor diode with integrated resistor has a semiconductor body with a front surface, a back surface and a diode structure with an anode electrode and a cathode electrode. A resistance layer arranged on the back surface of the semiconductor body provides the integrated resistor

1 . A semiconductor diode, comprising:
 a semiconductor body including a front surface and a back surface;   a diode structure including an anode electrode and a cathode electrode; and   a resistance layer arranged on the back surface of the semiconductor body providing an integrated resistor, one of the anode electrode and the cathode electrode providing an electrode material of the resistance layer and entirely covering the back surface of the semiconductor diode.   
   
   
       2 . The semiconductor diode of  claim 1 , wherein the resistance layer partially covers the semiconductor material of the semiconductor body on the back surface. 
   
   
       3 . The semiconductor diode of  claim 1 , wherein the resistance layer entirely covers the semiconductor material of the semiconductor body on the back surface. 
   
   
       4 . The semiconductor diode of  claim 1 , wherein the resistance layer includes carbon. 
   
   
       5 . The semiconductor diode of  claim 1 , wherein the resistance layer includes monocrystalline silicon, polycrystalline silicon or amorphous silicon. 
   
   
       6 . The semiconductor diode of  claim 1 , wherein the semiconductor body includes a substrate contributing to the thermal capacity and the resistance of the integrated resistor, and wherein the thickness of the resistance layer is reduced correspondingly. 
   
   
       7 . The semiconductor diode of  claim 1 , wherein the cathode electrode covers the back surface of the semiconductor diode. 
   
   
       8 . The semiconductor diode of  claim 7 , wherein the electrode material on the resistance layer includes ohmic regions and isolation regions. 
   
   
       9 . The semiconductor diode of  claim 7 , wherein the resistance layer includes isolation zones and resistance zones, the isolation zones and resistance zones covering the semiconductor material of the semiconductor body on the back surface, and wherein a layer including the isolation zones and the resistance zones is entirely covered by an electrode material. 
   
   
       10 . The semiconductor diode of  claim 1 , wherein a field stop zone is arranged in the semiconductor body towards a diode emitter zone. 
   
   
       11 . The semiconductor diode of  claim 1 , wherein the semiconductor diode includes a PIN diode structure. 
   
   
       12 . The semiconductor diode of  claim 1 , wherein the semiconductor diode includes a Schottky diode structure. 
   
   
       13 . The semiconductor diode of  claim 1 , wherein the semiconductor diode includes silicon as a semiconductor material. 
   
   
       14 . The semiconductor diode of  claim 1 , wherein the semiconductor diode includes silicon carbide as a semiconductor material. 
   
   
       15 . A semiconductor boot-strap diode with an integrated charge current resistor, comprising:
 a semiconductor body having a front surface and a back surface;   at least one cathode zone of a first conduction type;   at least one anode zone of a second conduction type;   at least one p-n junction between the cathode zone and the anode zone; and   a resistance layer arranged on the back surface of the semiconductor body providing the integrated charge current resistor.   
   
   
       16 . The semiconductor boot-strap diode of  claim 15 , wherein the resistance layer of the integrated charge current resistor at least partially covers the back surface of the semiconductor body, contacts the semiconductor material of the semiconductor body and is coated with an electrode material. 
   
   
       17 . The semiconductor boot-strap diode of  claim 15 , wherein the semiconductor body includes a substrate which is doped more highly than the cathode zone and contributes to the thermal capacity and the resistance of the integrated charge current resistor, and wherein the thickness of the resistance layer is reduced correspondingly. 
   
   
       18 . The semiconductor boot-strap diode of  claim 15 , wherein the resistance layer includes carbon. 
   
   
       19 . The semiconductor boot-strap diode of  claim 15 , wherein the resistance layer includes monocrystalline silicon, polycrystalline silicon or amorphous silicon. 
   
   
       20 . The semiconductor boot-strap diode of  claim 15 , wherein the resistance layer includes isolation zones and resistance zones, the isolation zones and resistance zones covering the semiconductor material of the semiconductor body on the back surface. 
   
   
       21 . The semiconductor boot-strap diode of  claim 15 , wherein the semiconductor boot-strap diode includes a plurality of spaced cathode zones and a common anode zone with a transition to a resistance layer arranged on the back surface. 
   
   
       22 . The semiconductor boot-strap diode of  claim 21 , wherein a field stop zone is arranged between a common drift zone and the common anode zone. 
   
   
       23 . A bridge circuit, comprising:
 a low side driver for at least one low side power transistor, the low side driver including a power controller;   a high side driver for at least one high side power transistor, the high side driver including a capacitor providing a power supply for the high side driver; and   a semiconductor boot-strap diode including:
 a semiconductor body having a front surface and a back surface; 
 a cathode zone of a first conduction type coupled to a cathode electrode; 
 an anode zone of a second conduction type coupled to an anode electrode; 
 at least one p-n junction between the cathode zone and the anode zone; and 
 a resistance layer arranged on the back surface of the semiconductor body providing an integrated charge current resistor; 
   wherein the cathode electrode is electrically coupled to the capacitor and wherein the anode electrode is electrically coupled to the power controller via the integrated charge current resistor of the semiconductor boot-strap diode.   
   
   
       24 . A three-phase full-bridge circuit, comprising:
 a low side driver for three low side power transistors;   three high side drivers for three corresponding high side power transistors, each of the high side drivers including a corresponding capacitor providing a power supply for the respective high side driver; and   a semiconductor boot-strap diode including:
 a semiconductor body having a front surface and a back surface; 
 three spaced cathode zones of a first conduction type coupled to three corresponding cathode electrodes; 
 a common anode zone of a second conduction type coupled to an anode electrode; 
 at least one p-n junction between the cathode zones and the anode zone; and 
 a resistance layer arranged on the back surface of the semiconductor body providing an integrated charge current resistor; 
   wherein the common anode is electrically coupled to a power controller of the low side driver via the integrated charge current resistor of the semiconductor boot-strap diode, and wherein each of the three cathodes of the semiconductor boot-strap diode is electrically coupled to a corresponding one of the capacitors of the three high side drivers.