Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device, includes the steps of preparing a semiconductor wafer having a connection pad, forming an insulating dam layer in which an opening portion is provided in an area including the connection pad, on the semiconductor wafer, and forming a bump electrode by mounting a conductive ball on the connection pad in the opening portion of the insulating dam layer.

1 . A semiconductor device, comprising:
 a semiconductor substrate having a connection pad;   a bump electrode connected to the connection pad, and projecting upward; and   an insulating dam layer formed on the silicon substrate and in which an opening portion is provided in an area including the bump electrode;   wherein a thickness of the insulating dam layer is set thinner than a height of the bump electrode, and a clearance is provided between the bump electrode and a side surface of the opening portion of the insulating dam layer.   
   
   
       2 . A semiconductor device according to  claim 1 , wherein a thickness of the insulating dam layer is set in a range of 20 to 50% of a height of the bump electrode. 
   
   
       3 . A semiconductor device according to  claim 1 , wherein the connection pad is constructed by a connection electrode made of aluminum or aluminum alloy and a metal barrier layer formed on the connection electrode, and
 the metal barrier layer is arrange convexly from on the connection electrode onto an insulating layer formed to a side of the connection electrode.   
   
   
       4 . A method of manufacturing a semiconductor device, comprising the steps of:
 preparing a semiconductor wafer having a connection pad;   forming an insulating dam layer in which an opening portion is provided in an area including the connection pad, on the semiconductor wafer; and   forming a bump electrode by mounting a conductive ball on the connection pad in the opening portion of the insulating dam layer.   
   
   
       5 . A method of manufacturing a semiconductor device, according to  claim 4 , after the step of forming the bump electrode, further comprising the step of:
 removing the insulating dam layer.   
   
   
       6 . A method of manufacturing a semiconductor device, according to  claim 4 , wherein, in the step of forming the bump electrode, at least an outer surface portion of the conductive ball is formed of solder, and
 after the conductive ball is mounted, the bump electrode connected to the connection pad is obtained by applying a reflow heating to the conductive ball.   
   
   
       7 . A method of manufacturing a semiconductor device, according to  claim 4 , wherein the step of forming the bump electrode includes,
 arranging a mask in which an opening portion corresponding to the connection pad is provided, on the semiconductor wafer, and mounting the conductive ball on the connection pad through the opening portion of the mask.   
   
   
       8 . A method of manufacturing a semiconductor device, according to  claim 4 , wherein the step of forming the bump electrode includes,
 arranging the semiconductor wafer to direct the connection pad downward,   arranging ball case in which a large number of conductive balls are housed, under the semiconductor wafer, and   making the conductive ball to adhere onto an adhesive material provided on the connection pad by flying the conductive ball toward the semiconductor wafer side while vibrating the ball case up and down.   
   
   
       9 . A method of manufacturing a semiconductor device, according to  claim 4 , wherein the step of forming the insulating dam layer is the step of,
 forming a resist on the semiconductor wafer, and forming the opening portion in the resist by a photolithography.   
   
   
       10 . A method of manufacturing a semiconductor device, according to  claim 4 , after the step of forming the bump electrode, further comprising the step of:
 obtaining individual semiconductor devices each formed of a semiconductor chip by cutting the semiconductor wafer, in a state that the insulating dam layer is removed or still left.