Semiconductor light emitting device

Abstract

Disclosed are a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad under the plurality of compound semiconductor layers; an electrode layer on the plurality of compound semiconductor layers; and a shock supporting member disposed on the plurality of compound semiconductor layers and corresponding to the pad.

1 . A semiconductor light emitting device comprising:
 a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;   a pad under the plurality of compound semiconductor layers;   an electrode layer on the plurality of compound semiconductor layers; and   a shock supporting member disposed on the plurality of compound semiconductor layers and corresponding to the pad.   
   
   
       2 . The semiconductor light emitting device of  claim 1 , wherein the electrode layer is formed between the shock supporting member and the plurality of compound semiconductor layers. 
   
   
       3 . The semiconductor light emitting device of  claim 1 , further comprising a conductive support member on the electrode layer, wherein the shock supporting member is formed between the electrode layer and the conductive support member. 
   
   
       4 . The semiconductor light emitting device of  claim 1 , comprising a channel layer formed to a circumference portion of the electrode layer. 
   
   
       5 . The semiconductor light emitting device of  claim 4 , wherein the channel layer is formed of a metallic oxide or a metallic nitride. 
   
   
       6 . The semiconductor light emitting device of  claim 1 , wherein the shock supporting member includes at least one of W and Mo. 
   
   
       7 . The semiconductor light emitting device of  claim 1 , wherein the shock supporting member has a thickness of about 1 um to about 10 um by using a metallic material having a high melting point. 
   
   
       8 . The semiconductor light emitting device of  claim 4 , wherein the channel layer is formed between the electrode layer and the plurality of compound semiconductor layers. 
   
   
       9 . The semiconductor light emitting device of  claim 8 , wherein the channel layer includes at least one selected from the group consisting of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 , ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO. 
   
   
       10 . The semiconductor light emitting device of  claim 8 , wherein an inner portion of the channel layer is formed on the plurality of compound semiconductor layers and an outer portion of the channel layer is extended to an outer side of the plurality of compound semiconductor layers. 
   
   
       11 . A semiconductor light emitting device comprising:
 a plurality of compound semiconductors layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;   a transparent channel layer to a circumference portion of the first conductive semiconductor;   a pad under the plurality of compound semiconductor layers;   an electrode layer on the compound semiconductor layers;   a conductive support member on the electrode layer; and   a shock protecting member corresponding to the pad and formed between the electrode layer and the conductive support member.   
   
   
       12 . The semiconductor light emitting device of  claim 11 , an ohmic-contact layer between the electrode layer and the compound semiconductor layers. 
   
   
       13 . The semiconductor light emitting device of  claim 11 , wherein the shock protecting member is formed with a predetermined thickness in an area corresponding to the pad, the shock protecting member including W or Mo. 
   
   
       14 . The semiconductor light emitting device of  claim 11 , wherein the electrode layer comprise a conductive support member, and the shock protecting member has a cylindrical shape or a polygonal prism shape in the conductive support member. 
   
   
       15 . The semiconductor light emitting device of  claim 11 , wherein the transparent channel layer is formed of insulating layer or a conductive layer. 
   
   
       16 . The semiconductor light emitting device of  claim 11 , wherein the first conductive semiconductor layer is an N-type semiconductor based on group III-V compound semiconductors, and the second conductive semiconductor layer is a P-type semiconductor based on group III-V compound semiconductors. 
   
   
       17 . The semiconductor light emitting device of  claim 11 , comprising a plurality of pads and a plurality of shock protecting members. 
   
   
       18 . The semiconductor light emitting device of  claim 11 , wherein the shock protecting member has a thickness of about 1 um to about 10 um based on at least one of W and Mo. 
   
   
       19 . The semiconductor light emitting device of  claim 11 , comprising a layer or a plurality of patterns formed between the electrode layer and the second conductive semiconductor layer and including at least one of SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO 2 , ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IrOx, RuOx. 
   
   
       20 . The semiconductor light emitting device of  claim 11 , comprising a N-type semiconductor layer formed between the electrode layer and the second conductive semiconductor layer.