Apparatus for in-situ substrate processing

Abstract

A plasma processing system (system) for processing a substrate is provided. The system includes a gas distribution system and a gas flow control assembly coupled to the gas distribution system. The gas flow control assembly is configured to control the input gases provided by the gas distribution system. The plasma processing system also includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate. The flow rate of the first set of gases is different from a flow rate of the second set of gases.

1 . A plasma processing system for processing a substrate, the plasma processing system comprising:
 a gas distribution system;   a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system, the set of input gases including at least one gas;   a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate; and   a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate,   wherein the first set of gases represents a first portion of the set of input gases,   the second set of gases represents a second portion of the set of input gases, and   a flow rate of the first set of gases is different from a flow rate of the second set of gases.   
     
     
         2 . The plasma processing system of  claim 1  wherein the first portion of the substrate represents a center zone of the substrate, the second portion of the substrate represents an edge zone of the substrate, and the flow rate of the first set of gases is higher than the flow rate of the second set of gases. 
     
     
         3 . The plasma processing system of  claim 1  wherein at least one of the first set of nozzles and the second set of nozzles represents part of an electrode of the plasma processing system. 
     
     
         4 . The plasma processing system of  claim 1  wherein the set of input gases includes oxygen. 
     
     
         5 . The plasma processing system of  claim 1  wherein the set of input gases includes an inert gas configured to collide with plasma generated from at least one of the first set of gases and the second set of gases. 
     
     
         6 . The plasma processing system of  claim 1  configured to execute a waferless auto clean process. 
     
     
         7 . The plasma processing system of  claim 1  further comprising a temperature control system coupled to an upper chamber of the plasma processing system, the temperature control system including a heating unit configured to heat an electrode disposed inside the upper chamber of the plasma processing system. 
     
     
         8 . The plasma processing system of  claim 7  wherein the electrode comprises at least one of the first set of nozzles and the second set of nozzles. 
     
     
         9 . The plasma processing system of  claim 7  wherein the temperature control system further includes a cooling unit configured to transport heat away from the upper chamber. 
     
     
         10 . The plasma processing system of  claim 7  wherein the temperature control system includes a dissipation band and a thermally conductive layer, the dissipation band is disposed between the heating unit and the upper chamber and is configured to perform radial dissipation of thermal loads, and the thermally conductive layer is disposed between the dissipation band and the upper chamber and is configured to conduct the thermal loads in a direction that is perpendicular to an interface between the upper chamber and the thermally conductive layer. 
     
     
         11 . The plasma processing system of  claim 1  further comprising a heating unit configured to heat at least one of an electrode and a plasma processing chamber of the plasma processing system, thereby reducing an amount of contaminants that attach to the at least one of the electrode and the plasma processing chamber of the plasma processing system. 
     
     
         12 - 29 . (canceled) 
     
     
         30 . A plasma processing system for processing a substrate, the plasma processing system comprising:
 a barrier layer;   a deposited photoresist element;   a mean for supplying and ionizing a first set of gases to partially etch the deposited photoresist element at a first portion of the substrate in a plasma processing chamber to result in a remaining portion of the deposited photoresist element;   a mean for supplying and ionizing a second set of gases to partially etch the deposited photoresist element at a second portion of the substrate in the plasma processing chamber to remove the remaining portion of the deposited photoresist element; and   a mean for removing the barrier layer in the plasma processing chamber, wherein the first portion of the substrate represents an edge zone of the substrate, the first set of gases and the second set of gases having the same composition, and the first set of gases and the second set of gases having different flow rates.   
     
     
         31 . The plasma processing system of  claim 30  further comprising a mean for controlling the first set of gases and the second set of gases such that the first set of gases and the second set of gases have different flow rates. 
     
     
         32 . The plasma processing system of  claim 30  further comprising a mean for controlling a set of input gases to generate the first set of gases and the second set of gases. 
     
     
         33 . The plasma processing system of  claim 30  further comprising a mean for executing a waferless auto clean process. 
     
     
         34 . The plasma processing system of  claim 30  further comprising a mean for heating at least a portion of the plasma processing chamber to reduce an amount of contaminants that is attached to the plasma processing chamber. 
     
     
         35 . The plasma processing system of  claim 30  further comprising a mean for heating an electrode of the plasma processing system, the electrode is configured to supply at least one of the first set of gases and the second set of gases. 
     
     
         36 . The plasma processing system of  claim 30  further comprising a mean for supplying an inert gas to collide with plasma generated from at least one of the first set of gases and the second set of gases, thereby reducing a processing rate of the processing. 
     
     
         37 . A plasma processing system for processing a substrate, the plasma processing system comprising:
 a mean for injecting a first portion of a first set of gases into the plasma processing chamber through a first set of nozzles of a showerhead with a first flow rate, the first set of nozzles being positioned above a center zone of the substrate;   a mean for injecting a second portion of the first set of gases into the plasma processing chamber through a second set of nozzles of the showerhead with a second flow rate, the first portion of the first set of gases and the second portion of the first set of gases having the same composition, the first flow rate being different from the second flow rate, the second set of nozzles being positioned above an edge zone of the substrate;   a mean for injecting a second set of gases into the plasma processing chamber;   a mean for exciting the first portion of the first set of gases into a first plasma;   a mean for performing at least one of etching and deposition on the substrate utilizing the first plasma;   a mean for exciting the second portion of the first set of gases into a second plasma;   a mean for processing the substrate using the second plasma;   a mean for providing a temperature control system surrounding an electrode, the electrode representing the showerhead for delivering at least one of the first set of gases and the second set of gases into the plasma processing chamber; and   a mean for heating the electrode using the temperature control system to increase collision between the first plasma and the second set of gases, thereby reducing a processing rate of the at least one of etching and deposition.   
     
     
         38 . The plasma processing system of  claim 37  further comprising
 a mean for using the electrode to inject the first portion of the first set of gases through the first set of nozzles of the showerhead and the second set of gases through the second set of nozzles of the showerhead; and   a mean for heating at least a portion of the plasma processing chamber to reduce an amount of contaminants that attach to the plasma processing chamber.