Cleaning solution and semicondcutor process using the same

Abstract

A semiconductor process is provided. First, a metal layer, a dielectric layer and a patterned hard mask layer are sequentially formed on a substrate. Thereafter, a portion of the dielectric layer is removed to form an opening exposing the metal layer. Afterwards, a cleaning solution is used to clean the opening. The cleaning solution includes a triazole compound with a content of 0.00275 to 3 wt %, sulfuric acid with a content of 1 to 10 wt %, hydrofluoric acid with a content of 1 to 200 ppm and water.

1 . A semiconductor process, comprising:
 forming a metal layer, a dielectric layer and a patterned hard mask layer sequentially on a substrate;   removing a portion of the dielectric layer to form an opening exposing the metal layer; and   using a cleaning solution to clean the opening, the cleaning solution comprising:
 a triazole compound with a content of 0.00275 to 3 wt %; 
 sulfuric acid with a content of 1 to 10 wt %: 
 hydrofluoric acid with a content of 1 to 200 ppm; and 
 water. 
   
     
     
         2 . The process of  claim 1 , wherein the triazole compound comprises benzotriazole. 
     
     
         3 . The process of  claim 1 , wherein the metal layer comprises a first metal. 
     
     
         4 . The process of  claim 3 , the first meal comprises copper. 
     
     
         5 . The process of  claim 4 , wherein the metal layer comprises copper or copper alloy. 
     
     
         6 . The process of  claim 3 , wherein the patterned hard mask layer comprises a second metal, and the second metal is different from the first metal. 
     
     
         7 . The process of  claim 6 , wherein the second metal comprises titanium or tantalum. 
     
     
         8 . The process of  claim 7 , wherein the patterned hard mask layer comprises titanium, titanium nitride, tantalum, tantalum nitride or combinations thereof. 
     
     
         9 . The process of  claim 1 , wherein the opening comprises a dual damascene opening. 
     
     
         10 . The process of  claim 1 , wherein the opening comprises a via opening. 
     
     
         11 . The process of  claim 1 , wherein the dielectric layer comprises an inorganic material or an organic material. 
     
     
         12 . The process of  claim 1 , further comprising performing another cleaning step by introducing DI water with CO 2  after the step of using the cleaning solution to clean the opening. 
     
     
         13 . A cleaning solution for cleaning an opening in a dielectric layer, wherein the dielectric layer is disposed on a substrate, the opening exposes a metal layer disposed between the dielectric layer and the substrate, and a patterned hard mask layer is disposed on the dielectric layer, comprising:
 a triazole compound with a content of 0.00275 to 3 wt %;   sulfuric acid with a content of 1 to 10 wt %;   hydrofluoric acid with a content of 1 to 200 ppm; and   water.   
     
     
         14 . The cleaning solution of  claim 13 , wherein the triazole compound comprises benzotriazole.