Structures Having Aligned Nanorods And Methods Of Making

Abstract

Substrates having nanostructures disposed thereon and methods of forming nanostructures on the substrates are disclosed.

1 - 25 . (canceled) 
     
     
         26 . A method for forming nanostructures comprising:
 rotating a substrate having a non-planar surface at an angle θ, where θ is the angle defined by a vapor arrival line and a center axis of rotation of the substrate, wherein the substrate is a symmetrical structure having one center axis of rotation;   rotating the non-planar substrate about its center axis of rotation;   exposing the non-planar substrate to a vapor flux of a first type of material as the substrate rotates, wherein the exposure is at a temperature of less than a melting point of the material; and   forming nanostructures on the substrate.   
     
     
         27 . The method of  claim 26 , wherein the non-planar surface includes a cylindrical surface. 
     
     
         28 . The method of  claim 26 , wherein the non-planar surface includes a conical surface. 
     
     
         29 . The method of  claim 26 , wherein the non-planar surface includes a tapered surface. 
     
     
         30 . The method of  claim 26 , wherein the non-planar surface includes a tapered cylindrical surface. 
     
     
         31 . The method of  claim 26 , wherein the first type of material is selected from one of the following materials: a metal, a metal oxide, a metal nitride, a metal oxynitride, and combinations thereof. 
     
     
         32 . The method of  claim 26 , wherein the temperature is about room temperature. 
     
     
         33 . The method of  claim 26 , further comprising:
 exposing the substrate having nanostructures of the first type of material to a vapor flux of a second type of material as the substrate rotates, wherein the exposure is at a temperature of less than a melting point of the first type of material and the second type of material.   
     
     
         34 . The method of  claim 33 , further comprising:
 forming nanostructures of the second type of material on the substrate.   
     
     
         35 . The method of  claim 34 , further comprising:
 forming nanostructures of the second type of material on the nanostructures of the first type of material.   
     
     
         36 . The method of  claim 35 , further comprising:
 exposing the substrate having nanostructures of the first type of material and the second type of material to a vapor flux of a third type of material as the substrate rotates, wherein the exposure is at a temperature of less than a melting point of the first type of material, the second type of material, and the third type of material.   
     
     
         37 . The method of  claim 36 , further comprising:
 forming nanostructures of the third type of material on the substrate.   
     
     
         38 . The method of  claim 37 , further comprising:
 forming nanostructures of the third type of material on the nanostructures of the first type of material.   
     
     
         39 . The method of  claim 37 , further comprising:
 forming nanostructures of the third type of material on the nanostructures of the second type of material.   
     
     
         40 . The method of  claim 37 , further comprising:
 forming nanostructures of the third type of material on the nanostructures having both the first type of material and the second type of material, wherein the nanostructures of the third type of material are formed on the second type of material of the nanostructure.   
     
     
         41 . A method for forming nanostructures, comprising:
 rotating a conical substrate at an angle θ−α, wherein θ is the angle defined by a vapor arrival line and a center axis of rotation of the substrate, α is the semi-vertical angle of the conical substrate, and the conical substrate is a symmetrical structure having one center axis of rotation;   rotating the conical substrate about its center axis of rotation;   exposing the substrate to a vapor flux of a first material as the substrate rotates, wherein the exposure is at a temperature of less than a melting point of the material; and   forming nanostructures on the substrate.   
     
     
         42 . The method of  claim 41 , wherein θ>α. 
     
     
         43 . The method of  claim 41 , wherein θ<α, and further comprising a shadow mask disposed between a source of the vapor flux and the conical substrate, wherein the shadow mask inhibits the vapor flux from contacting the conical substrate from an outer edge of the conical substrate to the center axis of rotation of the conical substrate.