Semiconductor light emitting device

Abstract

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, an electrode layer on the light emitting structure, a conductive support member on the electrode layer, a conductive layer formed along a peripheral portion of an upper surface of the light emitting structure, and an insulating layer on the conductive layer.

1 . A semiconductor light emitting device comprising:
 a light emitting structure comprising a plurality of compound semiconductor layers;   an electrode layer on the light emitting structure;   a conductive support member on the electrode layer;   a conductive layer formed along a peripheral portion of an upper surface of the light emitting structure; and   an insulating layer on the conductive layer.   
     
     
         2 . The semiconductor light emitting device of  claim 1 , wherein a portion of the conductive layer makes contact with the electrode layer. 
     
     
         3 . The semiconductor light emitting device of  claim 1 , wherein the conductive layer and the insulating layer comprise at least one of a band shape, a ring shape and a frame shape, and are provided as a continuous pattern. 
     
     
         4 . The semiconductor light emitting device of  claim 1 , wherein an outer side of the insulating layer is located outwardly from a side of the conductive support member. 
     
     
         5 . The semiconductor light emitting device of  claim 1 , wherein the insulating layer has a thickness equal to or less than a thickness of the conductive support member. 
     
     
         6 . The semiconductor light emitting device of  claim 1 , the electrode layer comprises at least one of an ohmic contact layer, a reflective layer, and an adhesive layer. 
     
     
         7 . The semiconductor light emitting device of  claim 1 , comprising an electrode under the light emitting structure. 
     
     
         8 . The semiconductor light emitting device of  claim 1 , wherein the light emitting structure comprises:
 a first conductive semiconductor layer;   an active layer on the first conductive semiconductor layer; and   a second conductive semiconductor layer between the active layer and the electrode layer.   
     
     
         9 . The semiconductor light emitting device of  claim 1 , wherein the conductive layer comprises at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO. 
     
     
         10 . A semiconductor light emitting device comprising:
 a light emitting structure comprising a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer;   an electrode layer comprising a reflective electrode on the second conductive semiconductor layer;   a conductive layer formed along a peripheral portion of an upper surface of the second conductive semiconductor layer;   an insulating layer formed along a peripheral portion of an upper surface of the conductive layer; and   an electrode under the first conductive semiconductor layer.   
     
     
         11 . The semiconductor light emitting device of  claim 10 , wherein the conductive layer makes contact with the electrode layer and comprises at least one of a band shape, a ring shape and a frame shape. 
     
     
         12 . The semiconductor light emitting device of  claim 10 , wherein the conductive layer and the electrode layer comprises at least one selected from the group consisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au and Ni/IrOx/Au/ITO, and the insulating layer comprises at least one selected from the group consisting of SiO 2 , Si 3 N 4 , TiO 2  and Al 2 O 3 . 
     
     
         13 . The semiconductor light emitting device of  claim 10 , wherein the insulating layer is aligned on a plane different from an upper surface of the conductive support member. 
     
     
         14 . The semiconductor light emitting device of  claim 10 , wherein the insulating layer has a thickness of about 10 μm to about 100 μm, and the thickness of the insulating layer is equal to or less than a thickness of the conductive support member. 
     
     
         15 . The semiconductor light emitting device of  claim 10 , wherein the light emitting structure comprises an N type semiconductor layer or a P type semiconductor layer on the second conductive semiconductor layer. 
     
     
         16 . The semiconductor light emitting device of  claim 10 , wherein the insulating layer has a width of about 10 μm to about 20 μm, and the width of the insulating layer is smaller than a width of the conductive layer. 
     
     
         17 . The semiconductor light emitting device of  claim 10 , wherein the electrode layer contacts at least one of sides of the insulating layer. 
     
     
         18 . A semiconductor light emitting device comprising:
 a light emitting structure comprising a plurality of compound semiconductor layers;   an electrode layer on the light emitting structure;   a transparent conductive layer formed along a peripheral portion of an upper surface of the light emitting structure;   a transparent insulating layer formed along a peripheral portion of an upper surface of the transparent conductive layer;   a conductive support member on the electrode layer; and   an electrode under the light emitting structure.   
     
     
         19 . The semiconductor light emitting device of  claim 18 , wherein the light emitting structure comprises:
 an N type semiconductor layer;   an active layer on the N type semiconductor layer; and   a P type semiconductor layer on the active layer.   
     
     
         20 . The semiconductor light emitting device of  claim 18 , wherein the transparent insulating layer and the electrode layer are disposed along a peripheral portion between the conductive support member and the light emitting structure.