Pattern forming method and method of manufacturing semiconductor device

Abstract

A pattern forming method includes forming a resist film on a substrate, coating the resist film with a coating solution which forms a cover film on the resist film to form the cover film on the resist film, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, removing the cover film after the formation of the latent image, conducting a first inspection to inspect whether or not the cover film has a defect between said forming the latent image and said removing the cover film, performing predetermined processing when the defect is found in the first inspection, and developing the resist film to form a resist pattern on the substrate after said removing the cover film.

1 .- 6 . (canceled) 
   
   
       7 . A method of pattern forming comprising:
 forming a resist film on a substrate;   transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film;   conducting a first inspection to inspect whether or not the liquid immersion fluid remains on the resist film after said forming the latent image;   developing the resist film after the first inspection; and   performing predetermined processing when residual of the liquid immersion fluid is found in the first inspection.   
   
   
       8 . The method according to  claim 7 , wherein the predetermined processing includes:
 collecting the residual of the liquid immersion fluid; and   removing the resist film to return to said forming a resist film on a substrate.   
   
   
       9 . The method according to  claim 7 , wherein the predetermined processing includes:
 conducting, after said developing, a predetermined second inspection corresponding to a case where the liquid immersion fluid remains, for a substrate on which the liquid immersion fluid remains; and   removing the resist film from the substrate which is judged to be abnormal as a result of the second inspection, to return to said forming a resist film on a substrate.   
   
   
       10 . The method according to  claim 9 , wherein positional information of the residual of the liquid immersion fluid is obtained during the first inspection; and
 the second inspection is conducted in accordance with the positional information.   
   
   
       11 . The method according to  claim 7 , further comprising implementing processing to remove the liquid immersion fluid remaining on the resist film. 
   
   
       12 . The method according to  claim 7 , further comprising forming a cover film on the resist film before said forming the latent image. 
   
   
       13 . The method according to  claim 7 , further comprising rinsing the surface of the cover film by use of a rinsing liquid between the formation of the latent image and the post exposure bake; and
 removing the rinsing liquid on the cover film.   
   
   
       14 . The method according to  claim 7 , wherein post exposure bake is implemented for the resist film during a period after the first inspection and before said developing. 
   
   
       15 . A method of manufacturing a semiconductor device, comprising:
 forming a resist film on a semiconductor substrate;   transferring a semiconductor device pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film;   conducting a first inspection to inspect whether or not the liquid immersion fluid remains on the resist film after the formation of the latent image;   implementing post exposure bake for the resist film after the first inspection;   developing the resist film after the post exposure bake; and
 performing predetermined processing when residual of the liquid immersion fluid is found in the first inspection. 
   
   
   
       16 . The method according to  claim 15 , wherein the predetermined processing includes:
 collecting the residual of the liquid immersion fluid; and   removing the resist film to return to said forming a resist film on a semiconductor substrate.   
   
   
       17 . The method according to  claim 15 , wherein the predetermined processing includes:
 conducting, after said developing, a predetermined second inspection corresponding to a case where the liquid immersion fluid remains, for a substrate on which the liquid immersion fluid remains; and   removing the resist film from the substrate which is judged to be abnormal as a result of the second inspection to return to said forming a resist film on a semiconductor substrate.   
   
   
       18 . The method according to  claim 17 , wherein positional information of the residual of the liquid immersion fluid is obtained in the first inspection; and
 the second inspection is conducted in accordance with the positional information.   
   
   
       19 . The method according to  claim 15 , further comprising implementing processing to remove the liquid immersion fluid remaining on the resist film. 
   
   
       20 . The method according to  claim 15 , further comprising forming a cover film on the resist film before the formation of the latent image.