Method for Forming Insulation Film

Abstract

In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

1 . An electronic device including a substrate, manufactured by a process for forming an insulating film on the surface of the substrate, comprising the steps of:
 cleaning the substrate with plasma based on a cleaning gas comprising a rare gas;   oxidizing the substrate with plasma based on an oxidizing gas comprising a rare gas and oxygen, to thereby form an oxide film thereon;   nitriding the oxide film with plasma based on a nitriding gas comprising a rare gas and nitrogen, to thereby form an oxynitride film thereon;   treating the oxynitride film with plasma based on a treating gas comprising hydrogen after the nitriding to recover defects in the oxynitride film;   forming an electrode on the oxynitride film; and,   wherein the cleaning and oxidizing are conducted under the same operation principle; and,   the cleaning and oxidizing are conducted in the same vessel without exposure of the substrate to air.   
   
   
       2 . An electronic device according to  claim 1 , wherein the substrate is subjected to wet cleaning prior to the cleaning with plasma. 
   
   
       3 . An electronic device according to  claim 1 , wherein the electrode comprises polysilicon. 
   
   
       4 . An electronic device including a substrate, manufactured by a process for forming an insulating film on the surface of the substrate, comprising the steps of:
 cleaning the substrate with plasma based on a cleaning gas comprising a rare gas;   oxidizing the substrate with plasma based on an oxidizing gas comprising a rare gas and oxygen, to thereby form an oxide film thereon;   treating the oxide film with plasma based on a treating gas comprising hydrogen after the oxidizing to recover defects in the oxide film;   forming a High-k film on the oxide film after the treating;   forming an electrode on the High-k film; and,   wherein the cleaning and oxidizing are conducted under the same operation principle; and,   the cleaning and oxidizing are conducted in the same vessel without exposure of the substrate to air.   
   
   
       5 . An electronic device according to  claim 4 , wherein the High-k film comprises one material selected from the group consisting of Al 2 0 3 , Zr0 2 , Hf0 2 , and Ta 2 0 5 , ZrSiO, HfSiO and ZrA10. 
   
   
       6 . An electronic device according to  claim 4 , wherein the process comprises nitriding the oxide film with plasma based on a nitriding gas comprising a rare gas and nitrogen after the oxidizing. 
   
   
       7 . An electronic device according to  claim 4 , wherein the electrode comprises one material selected from the group consisting of polysilicon, silicon germanium and metal. 
   
   
       8 . An electronic device according to  claim 4 , wherein the treating gas consists of rare gas and hydrogen. 
   
   
       9 . An electronic device according to  claim 4 , wherein the substrate is subjected to wet cleaning prior to the cleaning with plasma.