Post-cmp treating liquid and manufacturing method of semiconductor device using the same

Abstract

A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

1 . A post-CMP treating liquid comprising:
 water;   resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, the resin particles being incorporated at a concentration ranging from 0.01 to 1 wt %;   a first surfactant having a carboxylic group;   a second surfactant having a sulfonyl group; and   tetramethyl ammonium hydroxide;   the treating liquid having a pH ranging from 4 to 9 and exhibiting a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.   
   
   
       2 . The post-CMP treating liquid according to  claim 1 , wherein the resin particles comprise at least one selected from the group consisting of poly(methyl methacrylate), polystyrene, polyethylene, polyethylene glycol, polyvinyl acetate, polybutadiene, polyisobutylene, polypropylene and polyoxymethylene. 
   
   
       3 . The post-CMP treating liquid according to  claim 1 , wherein the primary particle diameter of the resin particles ranges from 30 to 50 nm. 
   
   
       4 . The post-CMP treating liquid according to  claim 1 , wherein the resin particles are incorporated at a concentration ranging from 0.05 to 0.1 wt %. 
   
   
       5 . The post-CMP treating liquid according to  claim 1 , wherein the first surfactant is selected from the group consisting of polyacrylic acid, polyacrylate, polymethacrylic acid, polymethacrylate, acrylic acid-methacrylic acid and acrylic acid-methacrylate. 
   
   
       6 . The post-CMP treating liquid according to  claim 1 , wherein the first surfactant has a weight average molecular weight ranging from 2000 to 20000. 
   
   
       7 . The post-CMP treating liquid according to  claim 1 , wherein the first surfactant is incorporated at an amount ranging from 0.01 to 1 wt % based on a total weight of the treating liquid. 
   
   
       8 . The post-CMP treating liquid according to  claim 1 , wherein the second surfactant is selected from the group consisting of hexyl benzene sulfonate, octyl benzene sulfonate, dodecyl benzene sulfonate, tetradecyl benzene sulfonate, hexadecyl benzene sulfonate and octadecyl benzene sulfonate. 
   
   
       9 . The post-CMP treating liquid according to  claim 1 , wherein the second surfactant is incorporated at an amount ranging from 0.01 to 1 wt % based on a total weight of the treating liquid. 
   
   
       10 . The post-CMP treating liquid according to  claim 1 , further comprising a reducing agent. 
   
   
       11 . The post-CMP treating liquid according to  claim 10 , wherein the reducing agent is incorporated at an amount ranging from 0.01 to 1 wt % based on a total weight of the treating liquid.