Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

Abstract

An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO 2 substrates) are bonded at room-temperature to have practical bonding strength.

1 . A device comprising:
 one or more metal elements;   a first substrate;
 a second substrate bonded to said first substrate at room temperature through said one or more metal elements, 
 wherein an interface element existence ratio of said metal elements is 0.07 or above. 
   
   
   
       2 . The device according to  claim 1 , wherein the interface element existence ratio of said one or more metal elements is 0.1 or above. 
   
   
       3 . The device according to  claim 2 , wherein the interface element existence ratio of said one or more metal elements is 0.2 or above. 
   
   
       4 . The device according  claim 1 , wherein said device comprises a plurality of said metal elements,
 said plurality of metal elements is a set of metal elements selected the group consisting of:   a set of iron and chromium,   a set of iron and aluminum,   a set of iron, chromium, and aluminum,   a set of iron, chromium, and nickel, and   a set of iron, chromium, nickel, and aluminum.   
   
   
       5 . The device according to  claim 1 , wherein said first substrate has oxide as a main component. 
   
   
       6 . The device according to  claim 5 , wherein said first substrate has silicon dioxide as the main component, 
   
   
       7 . The device according to  claim 6 , wherein said first substrate is formed of a material selected the group consisting of single crystal material, polycrystalline material, glass, and ceramics. 
   
   
       8 . The device according to  claim 1 , wherein said first substrate has fluoride as a main component. 
   
   
       9 . The device according to  claim 1 , wherein said first substrate has carbine as a main component. 
   
   
       10 . The device according to  claim 1 , wherein said first substrate has nitride as a main component. 
   
   
       11 . The device according to  claim 1 , wherein a main component of material of said first substrate is the same as that of material of said second substrate. 
   
   
       12 . A method of manufacturing a device, comprising: performing sputtering on a surface of a first substrate;
 attaching one or more metal elements onto the surface of said first substrate; and   bonding a second substrate to the surface of said first substrate at room temperature,   wherein an interface element existence ratio of said one or more metal elements is 0.07 or above.   
   
   
       13 . The method according to  claim 12 , wherein the interface element existence ratio of said one or more metal elements is 0.1 or above. 
   
   
       14 . The method according to  claim 13 , wherein the interface element existence ratio of said one or more metal elements is 0.2 or above. 
   
   
       15 . The method according to  claim 12 , further comprising:
 performing the sputtering on a surface of said second substrate at the same time that the surface of said first substrate is sputtered.   
   
   
       16 . The method according to  claim 12 , wherein said performing is performed as the same time as said attaching. 
   
   
       17 . The method according to  claim 12 , wherein said performing comprises:
 radiating accelerated particles to sputter the surface of said first substrate, and   said attaching comprises:   attaching said one or more metal elements on the surface of said first substrate, wherein said one or more metal elements are emitted from a metal emitter to which the accelerated particles are radiated.   
   
   
       18 . The method according to  claim 17 , wherein said metal emitter is at least one of a bonding apparatus, structural members and parts of a substrate holding mechanism a stage moving mechanism, and a substrate pressure welding mechanism disposed in said bonding apparatus. 
   
   
       19 . The method according to  claim 17 , wherein a parameter of the radiation of the particles is a velocity of the particles. 
   
   
       20 . The method according to  claim 17 , wherein a parameter of the radiation of the particles is a radiation time during which the 10 particles are radiated, 
   
   
       21 . The method according to  claim 17 , wherein a parameter of the radiation of the particles is an amount of the particles radiated onto 15 the surface of said first substrate per a unit time. 
   
   
       22 . The method according to  claim 12 , wherein a plurality of said metal elements are attached, and
 said plurality of metal elements are a set of metal elements selected the group consisting of:   a set of iron and chromium, a set of iron   and aluminum,   a set of iron, chromium, and aluminum,   a set of iron, chromium, and nickel, and   a set of iron, chromium, nickel, and aluminum.   
   
   
       23 . A room-temperature bonding apparatus comprising
 a vacuum chamber, in which a vacuum atmosphere is generated;   
     a substrate holding mechanism configured to hold substrates to be bonded under the vacuum atmosphere;
 a stage moving mechanism configured to move one of said substrates to a position; 
 a physical sputtering mechanism configured to activate bonding surfaces of said substrates; and 
 a pressure welding mechanism configured to perform a pressure welding process by pressing the activated bonding surfaces to each other, 
 
     wherein a plurality of metal elements are emitted in a predetermined composition from at least one of structural members and parts of said bonding apparatus, said substrate holding mechanism, said stage moving mechanism, and said pressure welding mechanism disposed in said bonding apparatus through sputtering by said physical sputtering mechanism. 
   
   
       24 . The room-temperature bonding apparatus according to  claim 23 , wherein said plurality of metal elements are a set of metal elements selected the group consisting of:
 a set of iron and chromium,   a set of iron and aluminum,   a set of iron, chromium, and aluminum,   a set of iron, chromium, and nickel, and   a set of iron, chromium, nickel, and aluminum