US2010091805A1PendingUtilityA1

Optical semiconductor element and optical semiconductor device

Assignee: EUDYNA DEVICES INCPriority: Mar 31, 2006Filed: Dec 17, 2009Published: Apr 15, 2010
Est. expiryMar 31, 2026(expired)· nominal 20-yr term from priority
H10W 72/5445H01S 5/06256H01S 5/06258H01S 5/1209H01S 5/02345H01S 5/0265H01S 5/0612H01S 5/028
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Claims

Abstract

An optical semiconductor device includes an optical semiconductor element, a metal pattern and at least one thermal conductive material. The optical semiconductor element has a first optical waveguide region and a second optical waveguide region. The second optical waveguide region is optically coupled to the first optical waveguide region and has a heater for changing a refractive index of the second optical waveguide region. The metal pattern is provided on an area to be thermally coupled to a temperature control device. The thermal conductive material couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element. The thermal conductive material is electrically separated from the first optical waveguide region.

Claims

exact text as granted — not AI-modified
1 . An optical semiconductor device comprising:
 an optical semiconductor element that has a first optical waveguide region and a second optical waveguide region,   the second optical waveguide region being optically coupled to the first optical waveguide region and having a heater for changing a refractive index of the second optical waveguide region;   a metal pattern that is provided on an area to be thermally coupled to a temperature control device; and   at least one thermal conductive material that couples the metal pattern with an upper face of the first optical waveguide region of the optical semiconductor element,   the thermal conductive material being electrically separated from the first optical waveguide region.   
   
   
       2 . The optical semiconductor device as claimed in  claim 1 , wherein at least one of the thermal conductive materials is coupled to an area at the second optical waveguide region side with respect to a center of the first optical waveguide region. 
   
   
       3 . The optical semiconductor device as claimed in  claim 1 , further comprising a second metal pattern that is provided on the area to be thermally coupled to the temperature control device and to be electrically coupled to outside,
 wherein the second metal pattern is electrically coupled to the area through the thermal conductive material,   the area being on an upper face of the first optical waveguide region and being electrically coupled to the first optical waveguide region.   
   
   
       4 . The optical semiconductor device as claimed in  claim 1 , wherein the first optical waveguide region is a gain region or a modulator region.

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