Method of determining angle misalignment in beam line ion implanters

Abstract

A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate by tilting the substrate as the ion beam is distributed across the target surface to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of to the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data.

1 . A method comprising:
 directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate by tilting said substrate as said ion beam is distributed across the target surface to implant ions into a plurality of portions of said substrate, wherein each one of said plurality of differing incident angles is associated with a different one of said plurality of portions;   measuring angle sensitive data from each of said plurality of portions of said substrate; and   determining an angle misalignment between said target surface and said ion beam incident on said target surface from said angle sensitive data.   
   
   
       2 . The method of  claim 1 , wherein said plurality of portions comprise is nine portions and said plurality of differing incident angles comprise nine differing incident angles, wherein each one of said nine differing incident angles is associated with a differing one of said nine portions. 
   
   
       3 . The method of  claim 1 , wherein said substrate has a crystalline structure and wherein said angle sensitive data is representative of damage to said crystalline structure. 
   
   
       4 . The method of  claim 1 , wherein said angle sensitive data is representative of a change in conductivity of said substrate. 
   
   
       5 . The method of  claim 1 , wherein said angle sensitive data is representative of a dopant profile of a concentration of said ions implanted in said substrate versus a depth from said target surface of said substrate. 
   
   
       6 . The method of  claim 1 , wherein said plurality of incident angles comprises substantially continuous ion beam incident angles. 
   
   
       7 . The method of  claim 1 , wherein said plurality of incident angles comprises incrementally varied ion beam incident angles. 
   
   
       8 . The method of  claim 1 , wherein said angle misalignment comprises a horizontal angle misalignment in a horizontal plane, and said method further comprises determining an offset tilt angle to tilt said substrate about a vertical axis to compensate for said horizontal angle misalignment. 
   
   
       9 . The method of  claim 1 , wherein said misalignment comprises a vertical angle misalignment in a vertical plane, and said method further is comprises determining an offset tilt angle to said substrate about a horizontal axis to compensate for said vertical angle misalignment. 
   
   
       10 . The method of  claim 1 , further comprising determining a substrate miscut angle in a first direction between a desired crystalline plane and an actual plane of said target surface of said substrate from said angle sensitive data.