Electronic component device and method for producing the same

Abstract

In a method for producing an electronic component device, a heat bonding step is performed in a state in which low melting point metal layers including low melting point metals including, for example, Sn as the main component, are arranged to sandwich, in the thickness direction, a high melting point metal layer including a high melting point metal including, for example, Cu as the main component, which is the same or substantially the same as high melting point metals defining first and second conductor films to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers is reduced. Thus, the time required for the diffusion is reduced, and the time required for the bonding is reduced.

1 . A method for producing an electronic component device, comprising:
 a step of individually preparing a first component on which a first conductor film including a first high melting point metal is formed and a second component on which a second conductor film including a second high melting point metal is formed;   a low melting point metal layer forming step of forming a low melting point metal layer including a low melting point metal having a melting point less than that of the first and second high melting point metals on at least one of the first and second conductor films;   a heat bonding step of, while the first conductor film and the second conductor film are arranged facing each other with the low melting point metal layer interposed therebetween, performing heating at a temperature between the melting points of the first and second high melting point metals and the melting point of the low melting point metal to form an intermetallic compound of the first and second high melting point metals and the low melting point metal, thereby forming a bonding portion at which the first conductor film and the second conductor film are bonded to each other; and   a high melting point metal layer forming step of forming a high melting point metal layer including the same or substantially the same high melting point metal as at least one of the first and second high melting point metals so as to contact the low melting point metal layer; wherein   the low melting point metal layer forming step includes a step of forming the low melting point metal layer such that the high melting point metal layer is sandwiched between the low melting point metal layers in a thickness direction thereof in the heat bonding step;   the high melting point metal layer formed in the high melting point metal layer forming step has a thickness such that the high melting point metal is supplied in an amount greater than an amount that is consumed during the formation of the intermetallic compound; and   the heat bonding step is performed so that the intermetallic compound is produced while a portion of the high melting point metal layer remains at the bonding portion.   
     
     
         2 . The method for producing an electronic component device according to  claim 1 , wherein the first high melting point metal and the second high melting point metal are the same or substantially the same. 
     
     
         3 . The method for producing an electronic component device according to  claim 2 , wherein the high melting point metal includes Cu as the main component, the low melting point metal includes Sn as the main component, and the intermetallic compound is Cu 3 Sn. 
     
     
         4 . The method for producing an electronic component device according to  claim 3 , wherein, by performing the low melting point metal layer forming step and the high melting point metal layer forming step, the low melting point metal layer including Sn as the main component is formed on the first conductor film including Cu as the main component, and the low melting point metal layer including Sn as the main component is formed on the second conductor film including Cu as the main component, the high melting point metal layer including Cu as the main component is formed on the low melting point metal layer, and then the low melting point metal layer including Sn as the main component is formed on the high melting point metal layer, in that order. 
     
     
         5 . The method for producing an electronic component device according to  claim 1 , which is used to bond a first sealing frame and a second sealing frame to each other; wherein
 the first component is a main substrate on one principal surface of which an electronic circuit formation portion and a first sealing frame surrounding the electronic circuit formation portion are formed and the second component is a cap substrate on one principal surface of which a second sealing frame to be bonded to the first sealing frame is formed; and   the first sealing frame is defined by the first conductor film and the second sealing frame is defined by the second conductor film.   
     
     
         6 . The method for producing an electronic component device according to  claim 5 , wherein a first connecting electrode is formed on the one principal surface of the main substrate and surrounded by the first sealing frame, a second connecting electrode is formed on the one principal surface of the cap substrate and surrounded by the second sealing frame, and a step of electrically connecting the first connecting electrode and the second connecting electrode to each other is performed simultaneously with the heat bonding step. 
     
     
         7 . The method for producing an electronic component device according to  claim 1 , wherein
 the step of individually preparing the first and second components includes a step of preparing a first aggregate substrate and a second aggregate substrate individually providing a plurality of the first and second components, the low melting point metal layer forming step, the high melting point metal layer forming step, and the heat bonding step are performed on the first and second aggregate substrates, and, in order to produce the plurality of the first and second components from the first and second aggregate substrates, a step of dividing the first and second aggregate substrates is performed after the heat bonding step.   
     
     
         8 . An electronic component device, comprising:
 a first component on which a first conductor film including a first high melting point metal is provided;   a second component on which a second conductor film including a second high melting point metal is provided; and   a bonding portion arranged to bond the first conductor film and the second conductor film to each other; wherein   the bonding portion includes a first intermetallic compound layer including an intermetallic compound of the first high melting point metal and a low melting point metal having a melting point less than that of the first and second high melting point metals, a second intermetallic compound layer including an intermetallic compound of the second high melting point metal and the low melting point metal, and a high melting point metal layer that is arranged between the first and second intermetallic compound layers and that includes one of the first and second high melting point metals.