Vapor Phase Epitaxy System

Abstract

A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode.

1 . A vapor phase epitaxy system comprising:
 a. a platen that supports substrates for vapor phase epitaxy;   b. a gas injector comprising a first region that is coupled to a first precursor gas source and a second region that is coupled to a second precursor gas source, the gas injector injecting the first precursor gas into the first region and injecting the second precursor gas into the second region;   c. at least one electrode that is positioned in the first region so that first precursor gas molecules flow proximate to the at least one electrode and positioned to be substantially isolated from a flow of the second precursor gas; and   d. a power supply having an output that is electrically connected to the at least one electrode, the power supply generating a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode.   
   
   
       2 . The system of  claim 1  wherein the gas injector comprises liquid cooling channels to control a temperature of the gas injector. 
   
   
       3 . The system of  claim 1  wherein the first and second regions in the gas injector comprise a plurality of first and second regions that alternate across at least a portion of the gas injector. 
   
   
       4 . The system of  claim 1  wherein at least one of the first and second precursor gases flows through the gas injector in a direction that is perpendicular to the platen that supports the substrates. 
   
   
       5 . The system of  claim 1  wherein at least one of the first and second precursor gases flows through the gas injector in a direction that is parallel to the platen that supports the substrates. 
   
   
       6 . The system of  claim 1  wherein one of the first and second precursor gases flow through the gas injector in a direction that is substantially parallel to the platen that supports the substrates and the other of the first and second precursor gases flow through the gas injector in a direction that is substantially perpendicular to the platen that supports the substrates. 
   
   
       7 . The system of  claim 1  wherein the gas injector flows the first and second precursor gases over the platen with a laminar flow. 
   
   
       8 . The system of  claim 1  wherein the gas injector flows the first and second precursor gas over the platen with a non-laminar flow. 
   
   
       9 . The system of  claim 1  wherein the gas injector further comprises a baffle that physically separates the first and the second regions. 
   
   
       10 . The system of  claim 9  wherein the baffle is shaped to preserve laminar flow of the first and second precursor gases across the platen that supports the substrates. 
   
   
       11 . The system of  claim 9  wherein the baffle is formed of a non-thermally conductive material. 
   
   
       12 . The system of  claim 1  wherein the at least one electrode is formed of a catalytic material. 
   
   
       13 . The system of  claim 12  wherein the catalytic material comprises at least one of tungsten, rhenium, and molybdenum. 
   
   
       14 . The system of  claim 1  further comprising a catalytic electrode positioned proximate to the platen. 
   
   
       15 . The system of  claim 1  wherein the electrode is formed in a non-linear structure. 
   
   
       16 . The system of  claim 1  wherein the electrode is oriented in a plane of the gas injector. 
   
   
       17 . The system of  claim 1  wherein the electrode is oriented in a plane that is perpendicular to the gas injector. 
   
   
       18 . The system of  claim 1  wherein the electrode is positioned proximate to the platen. 
   
   
       19 . A method of vapor phase epitaxy, the method comprising:
 a. injecting a first precursor gas for vapor phase epitaxy in a first region proximate to a platen supporting substrates;   b. injecting a second precursor gas for vapor phase epitaxy in a second region proximate to the platen supporting substrates;   c. positioning an electrode in a flow of the injected first precursor gas;   d. isolating the electrode from a flow of the injected second precursor gas; and   e. activating the first precursor gas with the electrode.   
   
   
       20 . The method of  claim 19  wherein the activating the first precursor gas generates first precursor gas radicals. 
   
   
       21 . The method of  claim 19  wherein the activating the first precursor gas comprises energizing the electrode to thermally activate the first precursor gas. 
   
   
       22 . The method of  claim 19  wherein the activating the first precursor gas comprises catalytically activating the first precursor gas with a catalytic electrode material. 
   
   
       23 . The method of  claim 19  wherein the injecting the first precursor gas comprises injecting a hydride precursor gas and the injecting the second precursor gas comprises injecting an organometalic precursor gas. 
   
   
       24 . The method of  claim 23  further comprising injecting a halide precursor gas. 
   
   
       25 . The method of  claim 19  wherein the injecting the first precursor gas for vapor phase epitaxy comprises injecting a hydride precursor gas and the injecting the second precursor gas for vapor phase epitaxy comprises injecting an metal halide precursor gas. 
   
   
       26 . The method of  claim 19  wherein the injecting the first and second precursor gases for vapor phase epitaxy comprise injecting the first and second precursor gases parallel to the platen supporting substrates. 
   
   
       27 . The method of  claim 19  wherein the injecting the first and second precursor gases for vapor phase epitaxy comprise injecting the first and second precursor gases perpendicular to the platen supporting substrates. 
   
   
       28 . The method of  claim 19  wherein the injecting the first and second precursor gases for vapor phase epitaxy comprise injecting one of the first and second precursor gases perpendicular to the platen supporting substrates and injecting the other of the first and second precursor gases parallel to the platen supporting substrates. 
   
   
       29 . The method of  claim 19  wherein the injecting the first and second precursor gases comprise injecting the first and second precursor gases in a plurality of alternating first and second regions wherein the first precursor gas is injected in the first regions and the second precursor gas is injected in the second regions of the plurality of alternating first and second regions. 
   
   
       30 . The method of  claim 19  wherein the isolating the electrode from a flow of the injected second precursor gas comprises baffling the electrode. 
   
   
       31 . The method of  claim 30  wherein the baffling preserves laminar flow over the platen supporting substrates. 
   
   
       32 . A vapor phase epitaxy system comprising:
 a. a means for injecting a first precursor gas for vapor phase epitaxy in a first region proximate to a platen supporting substrates;   b. a means for injecting a second precursor gas for vapor phase epitaxy in a second region proximate to the platen supporting substrates;   c. an electrode positioned in a flow of the injected first precursor gas;   d. a means for isolating the electrode from a flow of the injected second precursor gas; and   e. a means for activating the first precursor gas with the electrode.   
   
   
       33 . The system of  claim 32  wherein the means for activating the first precursor gas with the electrode comprises energizing the electrode. 
   
   
       34 . The system of  claim 32  wherein the means for activating the first precursor gas with the electrode comprises forming a catalytic reaction with the electrode. 
   
   
       35 . The system of  claim 32  wherein the means for isolating the electrode from a flow of the injected second precursor gas comprises baffling the electrode. 
   
   
       36 . A method of vapor phase epitaxy, the method comprising:
 a. injecting a first precursor gas comprising H 2  and N 2  for vapor phase epitaxy in a first region proximate to a platen supporting substrates;   b. injecting a second precursor gas for vapor phase epitaxy in a second region proximate to the platen supporting substrates;   c. positioning a catalytic electrode in a flow of the injected first precursor gas;   d. isolating the electrode from a flow of the injected second precursor gas; and   e. energizing the catalytic electrode to activate the first precursor gas to generate at least one of NH 2  and NH.   
   
   
       37 . The method of  claim 36  further comprising positioning a second catalytic electrode in thermal communication with the platen supporting substrates that is not energized.