Tunable Semiconductor Component Provided with a Current Barrier

Abstract

This invention pertains to a color coatings blender apparatus to be used for color composition customization for the application of color coatings on 2D and 3D surfaces. The apparatus is comprised of a main body and interchangeable inserts all with central blender chambers and primary and secondary ports, and interchangeable spindles; the configurations of which are governed by coating technical characteristics. This invention integrates gradient specific programmable computer digital processes to function as internal editors, manipulate information and present the operator with multiple options and production overrides. This invention will make data analysis more interactive by utilizing existing external software applications as editors and expanding the process of visual communications for multiple purposes. While the blender apparatus, complete with external selectable appurtenances, can be used manually, it can also be combined with a programmable computer for producing physical gradient layers.

1 . An impedance tunable semiconductor component, said semiconductor component comprising
 a first conductive region, and   a second region   said first conductive region comprising a first type dopant composition   said second region comprising a second type dopant composition   said first conductive region and said second region being contiguous,   said first conductive region defining a laid down base conductive path,   said second type dopant composition having a dopant profile configured to render said second type dopant composition non-conductive relative to said first type dopant composition   said first conductive region comprising a first link member and a second link member; p 1  said first and second link members being disposed in juxtaposition such that said first and second link members are separated by a gap region defined by said second region,   said first conductive region having a heat modifiable dopant profile,   said second region having a heat modifiable dopant profile, at least with respect to said gap region,   characterised in that said semiconductor component further comprises a laid down current mask region disposed between and spaced apart from said first link member and said second link member, said current mask region having a heat modifiable dopant profile, and wherein said current mask region comprises a third type dopant composition different from that of said first and second type dopant compositions such that said current mask region interrupts said gap region for offsetting leakage of electrical current across the gap region between the first link member and the second link member.   
   
   
       2 . An impedance tuneable semiconductor component, said semiconductor component comprising
 a first conductive region defining a first discrete laid down base path for electrical conduction, said first region being a doped region having a heat modifiable dopant profile,   a second conductive region defining a second discrete laid down base path for electrical conduction, said second region being a doped region having a heat modifiable dopant profile and   a third region contiguous with the first and second regions and being a doped region having a dopant profile rendering said third region electrically non-conductive relative to said first and second regions,   at least a potion of said second discrete laid down base path being disposed in juxtaposition with said first discrete laid down base path such that said first and second discrete laid down base paths are thereby separated by a gap region defined by said third region,   said third region having a heat modifiable dopant profile, at least with respect to said gap region,   said first conductive region having a pair of electrical contact means for electrically connecting the first conductive region to two or more electrical elements,   said second conductive region having an electrical contact means for electrically connecting the second conductive region to one or more electrical elements.   
   
   
       3 . An impedance tuneable semiconductor component as defined in  claim 2  wherein said second discrete laid down base path comprises a first element disposed transverse to a second element projecting from the first element, said second element comprising said contact means of said second conductive region, said first element being disposed in juxtaposition with said first discrete laid down base path so as to be separated therefrom by said gap region. 
   
   
       4 . An impedance tuneable semiconductor component as defined in  claim 3  wherein said second discrete laid down base path comprises a T-like shaped member having a head element and a tail element projecting from the head element, said tail element comprising said contact means of said second conductive region, said head element being disposed in juxtaposition with said first discrete laid down base path so as to be separated therefrom by said gap region. 
   
   
       5 . An impedance tuneable semiconductor component as defined in  claim 3  wherein said second discrete laid down base path comprises an L-like shaped member having a foot element and a leg element projecting from the foot element, said foot element comprising said contact means of said second conductive region, said foot element being disposed in juxtaposition with said first discrete laid down base path so as to be separated therefrom by said gap region. 
   
   
       6 . An impedance tuneable semiconductor component as defined in  claim 2  further including a laid down metallic bridge element and wherein said first and second conductive regions are electrically interconnected by said metallic bridge element, said metallic bridge element being severable by a focused heating source. 
   
   
       7 . An impedance tuneable semiconductor component as defined in  claim 2  said semiconductor component further comprises a laid down current mask region interposed in said gap region, said current mask region having a heat modifiable dopant profile, and wherein said current mask region comprises a dopant profile different from that of said first and second type dopant compositions such that said current mask region interrupts said gap region for offsetting leakage of electrical current across the gap region between said first and second conductive regions.