Plasma generating device

Abstract

A plasma generating device is disclosed, which generates plasma by supplying a bias RF power in the initial state in an inductive coupled plasma (ICP) system. Especially, an insulator which insulates a ground member from a susceptor supplied with the bias RF power is separated into at least two pieces such that the thermal expansion of the insulator can be generated similarly to adjoining parts.

1 . A plasma generating device comprising:
 a chamber;   a susceptor configured to support a substrate and receive power while supporting the substrate;   a support base supported by the chamber, the support base being configured to support the susceptor; and   an insulator between the susceptor and the support base to insulate the susceptor and the support base from each other,   wherein the insulator includes at least two pieces.   
     
     
         2 . The plasma generating device according to  claim 1 , wherein the insulator includes a first insulator and a second insulator, and an interface between the first and second insulators is an uneven surface including a prominence and a depression. 
     
     
         3 . The plasma generating device according to  claim 1 , wherein the insulator is made of at least one of a ceramic and an engineering plastic. 
     
     
         4 . The plasma generating device according to  claim 3 , wherein the ceramic contains at least one of Al 2 O 3  and AlN. 
     
     
         5 . The plasma generating device according to  claim 3 , wherein the engineering plastic contains at least one of polyether ether ketone (PEEK) resin, Ultem, and Teflon. 
     
     
         6 . The plasma generating device according to  claim 1 , wherein a vacuum space is between the support base and the chamber. 
     
     
         7 . The plasma generating device according to  claim 6 , wherein the support base and the chamber are connected by a communication member which fluidly communicates an inside of the support base with an outside of the chamber. 
     
     
         8 . A plasma generating device comprising:
 a chamber;   a susceptor configured to support a substrate and receive power while supporting the substrate;   a support base supported by the chamber, the support base being configured to support the susceptor; and   an insulator between the susceptor and the support base to insulate the susceptor and the support base from each other,   wherein the insulator has at least one sectional plane therein.   
     
     
         9 . The plasma generating device according to  claim 8 , wherein the at least one sectional plane is an uneven surface including a prominence and a depression. 
     
     
         10 . A plasma generating device comprising:
 a chamber;   a susceptor configured to support a substrate and receive power while supporting the substrate;   a support base supported by the chamber, the support base being configured to support the susceptor; and   an insulator between the susceptor and the support base to insulate the susceptor and the support base from each other,   wherein the insulator maintains a thermal strain, induced by temperature variations, that is substantially the same as a thermal strain of at least one of the susceptor and the support base.   
     
     
         11 . The plasma generating device according to  claim 10 , wherein the insulator includes at least two pieces. 
     
     
         12 . The plasma generating device according to  claim 10 , wherein the insulator and at least one of the susceptor and the support base are made of materials having substantially the same thermal expansion coefficients.