Semiconductor component and method for producing a semiconductor component

Abstract

A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.

1 . Semiconductor component, comprising
 a semiconductor body,   at least one protective trench in the semiconductor body,   an insulation layer at least at the bottom of the protective trench,   an electrically conductive layer having a thickness D on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.   
   
   
       2 . Semiconductor component according to  claim 1 , wherein the electrically conductive layer is arranged at least in sections only at the bottom of the protective trench. 
   
   
       3 . Semiconductor component according to  claim 1 , wherein at least one part of an electrical component is formed in the electrically conductive layer. 
   
   
       4 . Semiconductor component according to  claim 3 , wherein the at least one part of the electrical component is formed in a part of the electrically conductive layer that is arranged at the bottom of the protective trench. 
   
   
       5 . Semiconductor component according to  claim 3 , wherein the electrical component is formed completely in the electrically conductive layer. 
   
   
       6 . Semiconductor component according to  claim 3 , wherein the at least one part of the electrical component forms at least one gate electrode. 
   
   
       7 . Semiconductor component according to  claim 3 , wherein the at least one gate electrode is part of a planar MOS field effect transistor at the bottom of the protective trench. 
   
   
       8 . Semiconductor component according to  claim 1 , wherein, at least two partial regions of the electrically conductive layer have a dopant of a different conduction type. 
   
   
       9 . Semiconductor component according to  claim 1 , wherein the, electrically conductive layer is electrically connected at least to a connection device. 
   
   
       10 . Semiconductor component according to  claim 9 , wherein the electrical connection between the electrically conductive layer and the connection device is arranged at least partly in an auxiliary trench. 
   
   
       11 . Semiconductor component according to  claim 10 , wherein the auxiliary trench has a width B 2  where B 2 < 2 D. 
   
   
       12 . Semiconductor component according to  claim 1 , wherein a surface of the electrically conductive layer that is directed to a main surface of the semiconductor body runs at least partly parallel to the main surface of the semiconductor body in the protective trench. 
   
   
       13 . Semiconductor component according to  claim 1 , wherein at least one cell trench is formed in the semiconductor body. 
   
   
       14 . Semiconductor component according to  claim 13 , wherein the protective trench is wider than the cell trench. 
   
   
       15 . Semiconductor component according to  claim 13 , wherein the cell trench and the protective trench are arranged together in a cell array. 
   
   
       16 . Semiconductor component according to  claim 13 , wherein the cell trench is arranged in a cell array and the protective trench is arranged in an edge region. 
   
   
       17 . Semiconductor component according to  claim 1 , wherein, a protective layer is at least partly applied on the electrically conductive layer in the protective trench. 
   
   
       18 . Method for producing a semiconductor component, wherein the method comprises the following features:
 providing a semiconductor body,   producing at least one protective trench in the semiconductor body,   producing an insulation layer on the sidewalls and at the bottom of the protective trench,   producing an electrically conductive layer having a thickness D on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.   
   
   
       19 . Method according to  claim 18 , wherein the protective trench is produced together with a cell trench in the semiconductor body. 
   
   
       20 . Method according to  claim 18 , wherein the electrically conductive layer is produced in such a way that at least one partial region of the layer surface runs parallel to a main surface of the semiconductor body. 
   
   
       21 . Method according to  claim 18 , wherein the electrically conductive layer is provided with a dopant at least locally. 
   
   
       22 . Method according to  claim 21 , wherein the dopant is implanted into the layer and subsequently activated. 
   
   
       23 . Method according to  claim 18 , wherein the electrically conductive layer is firstly at least also partly produced on a main surface of the semiconductor body and the layer on the main surface of the semiconductor body is subsequently removed again. 
   
   
       24 . Method according to  claim 23 , wherein the removal of the electrically conductive layer on the main surface is effected by means of chemical mechanical polishing. 
   
   
       25 . Method according to  claim 18 , wherein a protective layer is at least partly applied on the electrically conductive layer in the protective trench.