Manufacturing method and manufacturing apparatus for semiconductor device

Abstract

A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.

1 . A manufacturing method for a semiconductor device, comprising:
 loading a wafer into a reaction chamber;   placing the wafer on a push-up shaft moved up;   preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up;   lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member;   heating the wafer to a predetermined temperature;   rotating the wafer; and   supplying a process gas onto the wafer.   
   
   
       2 . The manufacturing method according to  claim 1 , wherein, a difference between temperatures at a central portion and an outer-peripheral portion is controlled to be at least a critical temperature difference allowing the wafer to remain in the recess state when the wafer is heated to the predetermined temperature in the preheating. 
   
   
       3 . The manufacturing method according to  claim 1 , wherein, the wafer is heated to be higher temperature of a central portion of the wafer than an outer-peripheral portion of the wafer in the preheating. 
   
   
       4 . The manufacturing method according to  claim 3 , wherein a difference between temperatures of the central portion and the outer-peripheral portion of the wafer is at least 40° C. 
   
   
       5 . The manufacturing method according to  claim 1 , wherein an oxide film is formed on a rear face of the wafer. 
   
   
       6 . The manufacturing method according to  claim 1 , wherein the wafer is in the recess state when the wafer is placed on the push-up shaft. 
   
   
       7 . The manufacturing method according to  claim 1 , wherein the wafer is placed above the push-up shaft with at least apart of a wafer holding member disposed between the wafer and the push-up shaft. 
   
   
       8 . The manufacturing method according to  claim 1 , wherein a process gas not contributing to film formation alone is supplied under the state of placing the wafer on the push-up shaft moved up. 
   
   
       9 . The method for manufacturing a semiconductor device according to  claim 1 , wherein the process gas is supplied onto the wafer in a straightened state. 
   
   
       10 . The manufacturing method according to  claim 1 , wherein an inside of the reaction chamber is controlled to be at a normal pressure. 
   
   
       11 . The manufacturing method according to  claim 1 , wherein an oxide film is formed on a rear face of the wafer and a temperature of a central portion of the wafer is controlled to be higher than a temperature of an outer-peripheral portion of the wafer by at least 40° C. to retain the wafer in a recess state in the preheating. 
   
   
       12 . A manufacturing apparatus for a semiconductor device, comprising:
 a reaction chamber configured to load a wafer;   a gas supply mechanism configured to supply process gas to the reaction chamber;   a gas discharge mechanism configured to discharge gas from the reaction chamber;   an up/down drive mechanism configured to raise and lower the wafer, the mechanism having a push-up shaft configured to hold the wafer in recess state under a state of placing the wafer on the push-up shaft moved up;   a wafer holding member configured to place the wafer on the wafer holding member;   a heater configured to heat the wafer from below the wafer holding member;   a temperature control mechanism configured to control a temperature of the heater to be higher temperature of a central portion of the wafer than a temperature of an outer-peripheral portion of the wafer; and   a rotating mechanism configured to rotate the wafer.   
   
   
       13 . The manufacturing according to  claim 12 , wherein the temperature control mechanism control a difference between temperatures at a central portion and an outer-peripheral portion of the wafer to be at least a critical temperature difference allowing the wafer to remain in the recess state when the wafer is heated to the film-formation temperature. 
   
   
       14 . The manufacturing apparatus according to  claim 12 , wherein the difference between the temperatures at the central portion and the outer-peripheral portion of the wafer is at least 40° C. 
   
   
       15 . The manufacturing apparatus according to  claim 12 , wherein the temperature control mechanism further controls the in-plane temperature of the wafer to be uniform under a state of the push-up shaft moved down. 
   
   
       16 . The manufacturing apparatus according to  claim 12 , wherein the heater includes an in-heater and an out-heater installed around an outer-peripheral portion of the in-heater. 
   
   
       17 . The manufacturing apparatus according to  claim 16 , wherein the temperature control mechanism controls a difference between the temperatures at the central portion and the temperature of the outer-peripheral portion of the wafer by turning on the in-heater and turning off the out-heater. 
   
   
       18 . The manufacturing apparatus according to  claim 16 , wherein the temperature control mechanism controls the in-plane temperature of the wafer to be uniform by independently controlling the in-heater and the out-heater, respectively. 
   
   
       19 . The manufacturing apparatus according to  claim 12 , wherein the push-up shaft holds the wafer with at least a part of the wafer holding member disposed between the wafer and the wafer holding member. 
   
   
       20 . The manufacturing apparatus according to  claim 12 , further comprising a straightening vane configured to supply the process gas onto the wafer in a straightened state.